Sionyx, Inc.

Stephen D Saylor

Martin U Pralle

James Edward Carey

Susan A Alie

Christopher J Vineis

Systems, devices, and methods for identifying an individual in both cooperative and non-cooperative situations are provided. In one aspect, for example, a system for identifying an individual can include an active light source capable of emitting electromagnetic radiation having at least one wavelength of from about 700 nm to about 1200 nm, and an imager device positioned to receive the electromagnetic radiation upon reflection from an individual to generate an electronic representation of the individual. The system can also include an image processing module functionally coupled to the imager device to receive the electronic representation. The image processing module processes the electronic representation into an individual representation having at least one substantially unique identification trait. The imager device can include a semiconductor device layer having a thickness of less than about 10 microns, at least two doped regions forming a junction, and a textured region positioned to interact with the electromagnetic radiation, and can have an external quantum efficiency of at least about 33% for at least one wavelength of greater than 800 nm.

Biometric imaging devices and associated methods

Electromagnetic radiation detection systems and associated methods are provided. In one aspect, for example, an electromagnetic radiation detection system includes a semiconductor material operable to detect electromagnetic radiation, the semiconductor material having a responsivity of greater than or equal to 0.3 A/W at an operating voltage of less than or equal to about 50 volts and at a wavelength of from about 0.01 nm to about 100 nm. The system can further include an electromagnetic radiation source positioned to deliver electromagnetic radiation to the semiconductor material.

Electromagnetic radiation imaging devices and associated methods

Photovoltaic semiconductor devices and associated methods are provided. In one aspect, for example, a method of making a photovoltaic semiconductor device having enhanced electromagnetic radiation absorption can include applying a damage removal etch (DRE) to a semiconductor material to an RMS surface roughness of from about 0.5 nm to about 50 nm and texturing a single side of the semiconductor material. The texturing further includes irradiating a target region of the semiconductor material with laser radiation to create features having a size of from about 50 nm to about 10 microns.

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Annisquam, MA, United States of America

Stephen D Saylor