Micron Technology Incorporated

Seagate Technology Incorporated

Lsi Logic Corporation

Stephen D Hanna

Jonathan Scott Parry

David Aaron Palmer

Nadav Grosz

Timothy Lawrence Canepa

Qing Liang

Kulachet Tanpairoj

Christian M Gyllenskog

Luca Porzio

Sean L Manion

Zhengang Chen

Giuseppe D'Eliseo

Alex G Tang

Erich Franz Haratsch

Abdelhakim Alhussien

Jackson L Ellis

Leonid Baryudin

Earl T Cohen

Giuseppe Cariello

Ryan James Goss

Reshmi Basu

Liang Yu

Tal Sharifie

David Matthew Springberg

Jeffrey Munsil

Graeme M Weston-Lewis

Chulbum Kim

Sivakumar Sambandan

Jeonghun Kim

A memory device includes a set of memory dies, each memory die of the set of memory dies including a memory array and first control logic operatively coupled to the memory array, and an application-specific integrated circuit (ASIC) including a general-purpose input/output component (GPIO) including at least one digital pad communicably coupled to each memory die of the set of memory dies, and second control logic, operatively coupled to memory, to perform operations related to peak power management (PPM).

Peak power management extensions to application-specific integrated circuits

Methods, systems, and devices for low-power boot-up for memory systems are described. A memory system may be configured to receive, over a first conductive path of a second communication interface, a first indication to boot-up a memory system and a first communication interface associated with the memory system, wherein the first communication interface includes a plurality of conductive paths; receive, over a second conductive path of the second communication interface, a second indication whether to perform a boot-up operation of the memory system using a low-power mode or a high-power mode based at least in part on receiving the first indication; and boot the memory system according to the low-power mode or the high-power mode based at least in part on receiving the second indication.

Low-power boot-up for memory systems

Methods, systems, and devices for creating high density logical to physical mapping are described. A memory system may implement storage of mapping information to store the logical addresses and the corresponding physical addresses. A memory system may receive a command associated with data and a corresponding set of logical addresses, and in some cases the memory device may determine that the logical addresses are sequential. The memory device may generate and store a set of compressed entries in a macro level of the mapping information. When the memory system receives a command associated with an exception to the sequential logical addresses, the memory system may update an entry of the macro level to include a pointer to a set of entries in another level of the mapping information.

Creating high density logical to physical mapping

Methods, systems, and devices for integrating a pivot table in a logical-to-physical mapping of a memory system are described. The memory system may receive a read command and read a first entry of a first subset of mapping and a second entry of a second subset of mapping. The second entry may include at least a portion of a pivot table associated with physical addresses of a non-volatile memory device. The memory system may retrieve data from a physical address identified in the pivot table, rather than access a different portion of the logical-to-physical mapping. The memory system may transmit, to a host system, the data retrieved from the physical address identified in the pivot table.

Integrated pivot table in a logical-to-physical mapping

Apparatus and methods are disclosed, including using a memory controller to partition a memory array into a first portion and a second portion, the first portion and second portion having non-overlapping logical block addressing (LBA) ranges. The memory controller assigns a first granularity of a first logical-to-physical (L2P) mapping table entry for the first portion of the memory array designated for a first usage, and a second granularity of a second L2P mapping table entry for the second portion of the memory array designated for a second usage, where the second granularity is not equal to the first granularity. The memory controller stores the first granularity and the second granularity in the memory array, and stores at least a portion of the first L2P mapping table entry and the second L2P mapping table entry in an L2P cache of the memory controller.

Sequential data optimized sub-regions in storage devices

Methods, systems, and devices for address verification at a memory system are described. A memory system may determine an address identifier based on a received read command and maintain the determined address identifier in a protected state to validate a subsequent read operation. For example, the memory system may store the determined address identifier in a first memory array, separate from a second memory array that is read from in response to the read command. The memory system may also extract an address identifier from memory cells being read in response to the read command, which may include decoding or other interpreting operations performed on information read from the memory cells. The address identifier extracted from the memory cells may be compared with the address identifier determined from the read command and maintained in the protected state, which may support a determination of how to respond to the read command.

Address verification at a memory system

An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to receive a reset signal from a host computer system in communication with the memory system; identify, by decoding the reset signal, a host event specified by the reset signal; and process the identified host event.

Notifying memory system of host events via modulated reset signals

Methods, systems, and devices for device reset alert mechanism are described. The memory system may identify a fault condition associated with resetting the memory system and set, in a register associated with event alerts of the memory system, a first indication for a reset of the memory system. In some cases, the memory system may transmit a message that includes a second indication that the register associated with event alerts of the memory system has been changed based on setting the register. The memory system may reset one or more components of the memory system based on the first indication and the second indication.

Device reset alert mechanism

A memory control unit of a memory device includes at least one hardware processor; and memory storing instructions that cause the at least one hardware processor to perform operations comprising: generating a scrambler seed and a logical block address (LBA) for a block of write data received by the memory control unit from a host device; generating a flash translation layer (FTL) to map the LBA to a physical address (PA); scrambling the block of data using the scrambler seed; encrypting the scrambler seed, the LBA, and the PA in the FTL using an encryption key; initiating writing a scrambled block of data and encrypted LBA and scrambler seed to a memory array; and decrypting the FTL using an incorrect encryption key in response to an erase command received by the memory control unit from the host device.

Low cost and low latency logical unit erase

Devices and techniques are disclosed herein for allowing host-based maintenance of a flash memory device. In certain examples, memory write information can be encrypted at the memory device and provided to the host for updating and maintaining memory device maintenance statistics.

Host-based flash memory maintenance techniques

Methods, systems, and devices for techniques to perform a write operation are described. In response to receiving a sequential write command from a host system, the memory system may determine non-linear offsets for a set of requests for portions of the data. The memory system may determine a first subset of the data that includes data segments having logical addresses with gaps corresponding to the offset between the data segments to store in a first memory device. The memory system may store the first subset in a buffer and program the first subset to the first memory device. Additionally, the memory system may determine a second subset of data that using the offset and may transmit a second set of requests for the second subset of data, which may be stored in the buffer and programmed to a second memory device.

Techniques to perform a write operation

Methods, systems, and devices for memory error correction based on layered error detection are described. In some examples, a memory system identifies, based on a first type of error detection procedure, that a set of bits includes a quantity of erroneous bits that is uncorrectable based on the first type of error detection procedure alone. The memory system generates one or more candidate sets of bits based on altering different groups of bits within the set of bits and evaluate one or more such candidate sets of bits using a second type of error detection procedure until a candidate set of bits is identified as error-free. The memory system then corrects the set of bits based on the candidate set of bits identified as error-free.

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Fort Collins, CO, United States of America

Stephen D Hanna