Broadcom Corporation

Stephen Chi-Wang Au

Arya Behzad

Paul Chang

Dandan Li

Certain aspects of a method and system for a process sensor to compensate SoC parameters in the presence of IC process manufacturing variations are disclosed. Aspects of one method may include determining an amount of process variation associated with at least one transistor within a single integrated circuit. The determined amount of process variation may be compensated by utilizing a process dependent current, a bandgap current, and a current associated with a present temperature of the transistor. The process dependent current, the bandgap current and the current associated with the present temperature of the transistor may be combined to generate an output current. A voltage generated across a variable resistor may be determined based on the generated output current.

Method and system for a process sensor to compensate SoC parameters in the presence of IC process manufacturing variations

Method and system for a process sensor to compensate SOC parameters in the presence of IC process manufacturing variations

Aspects of a method and system for precise current matching in deep sub-micron technology may include adjusting a current mirror to compensate for MOSFET gate leakage currents by using feedback circuits. The feedback circuits may be implemented from active components to create active feedback circuits. If the reference current to be mirrored is noisy, a smoothing effect may be achieved by introducing a low-pass filter coupled to the current mirror design. The active feedback may comprise amplifiers, which may comprise one or more amplifier stages. The amplifier may amplify either a bias voltage error or a bias current error. Furthermore, a transimpedance amplifier may be utilized in the feedback loop. The output bias current of the current mirror may be stabilized dynamically during adjusting. Multiple current sources may be utilized in the current mirrors.

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San Diego, CA, United States of America

Stephen Chi-Wang Au