Corning Incorporated

Stephen Charles Currie

Bruce Gardiner Aitken

Lisa Anne Moore

Susan Lee Schiefelbein

John T Brown

Lung-Ming Wu

Robert Stephen Pavlik, Jr

Beth Costello Monahan

Everett William Coonan

Randall Eugene Youngman

Richard Curwood Peterson

Paul Martin Elliott

Mircea Despa

Disclosed herein are methods for producing glass articles by hot-melt processing techniques. The methods involve the use of arsenic-free chalcogenide glasses. Despite the absence of arsenic, the chalcogenide glasses have low characteristic temperatures and are stable against crystallization. The low characteristic temperatures render the glasses capable of being hot-melt processed using conventional equipment. The glasses disclosed herein are suitable for the fabrication of optical devices, including but not limited to IR-transmitting optical devices.

Use of arsenic-free chalcogenide glasses for hot-melt processing

Selenogermanate, selenogallo- or selenoindo-germanate glasses that are modified by alkali metals, for example, Na or Li and, as such, are characterized by high alkali ion mobility or conductivity. Ionic conducting chalcogenide glasses have potential application as an electrolyte medium for solid state batteries.

Alkali selenogermanate glasses

A non-stoichiometric glass composition having greater than or equal to about 50 mol. % to less than or equal to about 95 mol. % GeX; greater than or equal to about 0.5 mol. % to less than or equal to about 35 mol. % GaX, InX, or a combination thereof; and greater than or equal to about 0.5 mol. % to less than or equal to about 40 mol. % RX. R can be an alkaline earth metal. X can be present in a non-stoichiometric amount and can be selected from Se, Te, S, and combinations thereof. A method for making a non-stoichiometric glass including forming a GaGeX precursor material, grinding the precursor material, loading the ground precursor material with an alkaline earth metal component, and forming an alkaline earth metal GaGeX glass.

Non-stoichiometric alkaline earth chalcogeno-germanate glasses

Boron-containing network sulfide glass which may be useful in IR transmitting applications, such as IR optics, laser or fiber amplifiers doped with rare earths with emission in the near IR, and methods of making the same.

Chalcogenide glass

IR-transmitting alkaline earth selenogallo- and/or selenoindo-germanate glasses that are capable of hosting luminescent rare earth dopants. The relatively high Ga and/or In content of most compositions serves to eliminate the typical clustering tendency of rare earth dopants in chalcogenide glasses, resulting in improved luminescence.

Pergallous alkaline earth selenogermanate glasses

A die for forming an extrusion includes a die body, a body feed section and an extrusion forming section. The die body may include an inlet and an outlet defining an extrudate flow path through the die body. The body feed section may be positioned between the inlet and outlet and includes an arrangement of body feed channels. The extrusion forming section may be positioned between the body feed section and the outlet and includes a thin-wall forming portion fluidly coupled to at least one thick-wall forming portion. The thin-wall forming portion may include an array of pins extending from the body feed section towards the outlet and the thick-wall forming portion may include at least one baffle section positioned in the extrudate flow path through the thick-wall forming portion. The area of the thick-wall forming portion may be greater than an interstitial area between the pins.

Dies for forming extrusions with thick and thin walls

The invention is directed to chalcogenide glasses suitable for use in plastics forming processes. The glasses have the general formula YZ, where Y is Ge, As, Sb or a mixture of two or more of the sane; Z is Se, Te, or a mixture of Se+Te; and Y and Z are present in amounts (in atomic/element percent) in the range of Y=15-70% and Z=30-85%. The chalcogenide glasses of the invention have a 10,000 poise temperature of 400&#xb0; C. and are resistant to crystallization when processed at high shear rates at their 10,000 poise temperature. The glasses can be used to make, among other items, molded telecommunication elements, lenses and infrared sensing devices.

Chalcogenide glass for low viscosity extrusion and injection molding

The invention is directed to chalcogenide glasses suitable for use in plastics forming processes. The glasses have the general formula YZ, where Y is Ge, As, Sb or a mixture of two or more of the same; Z is S, Se, Te, or a mixture of two or more of the same; and Y and Z are present in amounts (in atomic/element percent) in the range of Y=15&#x2013;70% and Z=30&#x2013;85%. The chalcogenide glasses of the invention have a 10,000 poise temperature of 400&#xb0; C. and are resistant to crystallization when processed at high shear rates at their 10,000 poise temperature. The glasses can be used to make, among other items, molded telecommunication elements, lenses and infrared sensing devices.

High purity direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive direct deposit vitrified silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a dry direct deposit vitrified silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1&times;10 molecules/cm of molecular hydrogen and low chlorine levels.

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Corning, NY, United States of America

Stephen Charles Currie