University of Southern California

University of California

Tai Chong Cheang Steamship Co. (h.k.) Limited

Massachusetts Institute of Technology

Stephen B Cronin

Mildred S Dresselhaus

Theodore C Harman

Takaaki Koga

Xiangzhong Sun

William Schroeder

Tom Huiskamp

Alec Nystrom

Sriram Subramanian

Kang L Wang

Martin Adolph Gundersen

Michael P Walsh

Roger Lake

David L Spears

Fokion Egolfopoulos

Mahesh Neupane

Vyaas Gururajan

Haotian Shi

Sisi Yang

Darshana Wickramaratne

Christi Schroeder

Rohan Dhall

Zhen Li

A system for exhaust gas remediation includes an engine, a plasma reactor, and a pulse source. The engine emits exhaust gas that includes NO molecules and NOx molecules. The plasma reactor includes an internal chamber that is fluidly connected to the engine such that the exhaust gas flows into the internal chamber. An electrode is disposed within the internal chamber of the plasma reactor. The electrode is electrically coupled to an electrical pulse source. The electrical pulse source delivers electrical pulse to the electrode to form a plasma from the exhaust gas, which removes at least a portion of the NO molecules and at least a portion of the NOx molecules.

Systems and methods for plasma-based remediation

This invention relates to methods and systems for reducing the concentration of SOx and/or NOx in gas streams.

Systems and methods for plasma-based remediation of SOand NO

Bulk direct transition metal dichalcogenide (TMDC) may have an increased interlayer separation of at least 0.5, 1, or 3 angstroms more than its bulk value. The TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe). Oxygen may be between the interlayers. A device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a thermoelectric generator, or a thermoelectric cooler. A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma. The plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.

Bulk direct gap MoS2 by plasma induced layer decoupling

A superlattice structure for thermoelectric power generation includes m monolayers of a first barrier material alternating with n monolayers of a second quantum well material with a pair of monolayers defining a superlattice period and each of the materials having a relatively smooth interface therebetween. Each of the quantum well layers have a thickness which is less than the thickness of the barrier layer by an amount which causes substantial confinement of conduction carriers to the quantum well layer and the alternating layers provide a superlattice structure having a figure of merit which increases with increasing temperature.

Superlattice structures for use in thermoelectric devices

A superlattice structure for use in thermoelectric power generation systems includes m layers of a first one of Silicon and Antimony doped Silicon-Germanium alternating with n layers of Silicon-Germanium which provides a superlattice structure having a thermoelectric figure of merit which increases with increasing temperature above the maximum thermoelectric figure of merit achievable for bulk SiGe alloys.

Si/SiGe superlattice structures for use in thermoelectric devices

Growing community of inventors

Cambridge, MA, United States of America

Stephen B Cronin