Lumileds Lighting U.s., LLC

Philips Lumileds Lighting Company LLC

Hewlett-packard Company

Koninklijke Philips Corporation N.v.

University of Illinois

Philips Lumides Lighting Company LLC

Limileds Lighting, U.s., LLC

Lumileds Holding B.v.

Stephen Andrew Stockman

Nathan Fredrick Gardner

Christopher P Kocot

Werner K Goetz

Michael Ragan Krames

Michael David Camras

Daniel Alexander Steigerwald

Fred A Kish

Andrew Y Kim

David P Bour

Fred A Kish, Jr

Paul Scott Martin

Frank Michael Steranka

Yu-Chen Shen

Tetsuya Takeuchi

Ghulam Hasnain

James Chinmo Kim

Michael Joseph Ludowise

R Scott Kern

Changhua Chen

Mark R Hueschen

Mira S Misra

Patrick N Grillot

Eugene I Chen

Oleg Borisovich Shchekin

Richard P Schneider

Robert C Taber

Ying-Lan Chang

Norbertus Antonius Maria Sweegers

Yourii Martynov

Nicolas J Moll

Marc Andre De Samber

Gloria E Hofler

Anneli Munkholm

Ashim Shatil Haque

Satoshi Watanabe

Gregory E Stillman

Nathan Frederick Gardner

Quesnell J Hartmann

Herman C Chui

Jen-Wu Huang

Nathan F Gardner

Richard Scott Kern

Tun-Sein Tan

A hollow frame is configured to surround the periphery of a substantially self-supporting flip-chip light emitting device. The frame may be shaped to also contain a wavelength conversion element above the light emitting surface of the light emitting device. The lower surface of the light emitting device, which is exposed through the hollow frame, includes contact pads coupled to the light emitting element for surface mounting the light emitting module on a printed circuit board or other fixture. The flip-chip light emitting device may include a patterned sapphire substrate (PSS) upon which the light emitting element is grown, the patterned surface providing enhanced light extraction from the light emitting element, through the patterned sapphire substrate.

Frame based package for flip-chip LED

A semiconductor light emitting device includes an active region, an n-type region, and a p-type region comprising a portion that extends into the active region. The active region may include multiple quantum wells separated by barrier layers, and the p-type extension penetrates at least one of the quantum well layers. The extensions of the p-type region into the active region may provide uniform filling of carriers in the individual quantum wells of the active region by providing direct current paths into individual quantum wells. Such uniform filling may improve the operating efficiency at high current density by reducing the carrier density in the quantum wells closest to the bulk p-type region, thereby reducing the number of carriers lost to nonradiative recombination.

Semiconductor light emitting device with lateral current injection in the light emitting region

A light emitting device includes a region of first conductivity type, a region of second conductivity type, an active region, and an electrode. The active region is disposed between the region of first conductivity type and the region of second conductivity type and the region of second conductivity type is disposed between the active region and the electrode. The active region has a total thickness less than or equal to about 0.25&#x3bb;and has a portion located between about 0.6&#x3bb;and 0.75&#x3bb;from the electrode, where &#x3bb;is the wavelength of light emitted by the active region in the region of second conductivity type. In some embodiments, the active region includes a plurality of clusters, with a portion of a first cluster located between about 0.6&#x3bb;and 0.75&#x3bb;from the electrode and a portion of a second cluster located between about 1.2&#x3bb;and 1.35&#x3bb;from the electrode.

Light emitting devices with compact active regions

A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.

Light emitting diodes with graded composition active regions

A semiconductor light emitting device includes a light emitting layer sandwiched between two spacer layers. The difference between the net polarization in at least one of the spacer layers and the net polarization in the light emitting layer is less than in the device with conventional spacer layers, such as GaN spacer layers. The difference between the net polarization in at least one of the spacer layers and the net polarization in the light emitting layer is less than about 0.02 C/m. In some embodiments, at least one of the spacer layers is a quaternary alloy of aluminum, indium, gallium, and nitrogen.

III-nitride light emitting device with reduced polarization fields

The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.

lll-phosphide light emitting devices with thin active layers

A light emitting structure includes a semiconductor light emitting device capable of emitting first light having a first peak wavelength, a luminescent material capable of emitting second light having a second peak wavelength disposed over the semiconductor light emitting device, and a photonic band gap material disposed between the light emitting device and the luminescent material. The photonic band gap material is capable of transmitting the first light and reflecting the second light, regardless of the angle of incidence of the first and second light.

Semiconductor light emitting device including photonic band gap material and luminescent material

A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.

III-Phosphide and III-Arsenide flip chip light-emitting devices

A light-emitting semiconductor device comprises a III-Nitride active region and a III-Nitride layer formed proximate to the active region and having a thickness that exceeds a critical thickness for relaxation of strain in the III-Nitride layer. The III-Nitride layer may be a carrier confinement layer, for example. In another aspect of the invention, a light-emitting semiconductor device comprises a III-Nitride light emitting layer, an InAlGaN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, x+y&#x2266;1), and a spacer layer interposing the light emitting layer and the InAlGaN layer. The spacer layer may advantageously space the InAlGaN layer and any contaminants therein apart from the light emitting layer. The composition of the III-Nitride layer may be advantageously selected to determine a strength of an electric field in the III-Nitride layer and thereby increase the efficiency with which the device emits light.

III-nitride light-emitting devices with improved high-current efficiency

A III-nitride light emitting device includes an n-type layer, a p-type layer, and an active region capable of emitting light between the p-type layer and the n-type layer. The active region includes at least one additional p-type layer. The p-type layer in the active region may be a quantum well layer or a barrier layer. In some embodiments, both the quantum well layers and the barrier layers in the active region are p-type. In some embodiments, the p-type layer in the active region has an average dislocation density less than about 5&times;10 cm .

III-nitride light emitting device with p-type active layer

A method for improving the operating stability of compound semiconductor minority carrier devices and the devices created using this method are described. The method describes intentional introduction of impurities into the layers adjacent to the active region, which impurities act as a barrier to the degradation process, particularly undesired defect formation and propagation. A preferred embodiment of the present invention uses O doping of III-V optoelectronic devices during an epitaxial growth process to improve the operating reliability of the devices.

Minority carrier semiconductor devices with improved reliability

III-Phospide and III-Arsenide flip chip light-emitting devices

Growing community of inventors

Morgan Hill, CA, United States of America

Stephen Andrew Stockman