Air Products and Chemicals, Inc.

Mitsui Petrochemical Industries, Ltd.

Arco Chemical Company

Stephen Andrew Motika

Eugene Joseph Karwacki, Jr

Bing Ji

Michael Francis Carolan

Paul N Dyer

Dingjun Wu

Andrew David Johnson

Patrick Benjamin Alba

Mark Leonard O'Neill

Timothy Christopher Golden

Raymond Nicholas Vrtis

Ronald Martin Pearlstein

David A Roberts

Robert Gordon Ridgeway

Aaron Scott Lukas

Dale M Taylor

Thomas Stephen Farris

Peter James Maroulis

Matthew James Watson

Eric Minford

Timothy L Pickering

Hoshang Subawalla

Andrzej Rokicki

W Eamon Carroll

Glenn Michael Mitchell

Beatrice K Stein

A process for selectively etching a material comprising SiOover silicon, the method comprising the steps of: placing a silicon substrate comprising a layer of a material comprising SiOwithin a reactor chamber equipped with an energy source; creating a vacuum within the chamber; introducing into the reactor chamber a reactive gas mixture comprising a fluorine compound, a polymerizable fluorocarbon, and an inert gas, wherein the reactive gas mixture is substantially free of added oxygen; activating the energy source to form a plasma activated reactive etching gas mixture within the chamber; and selectively etching the material comprising SiOpreferentially to the silicon substrate.

Selective etching of silicon dioxide compositions

A process for removing carbon-containing residues from a substrate is described herein. In one aspect, there is provided a process for removing carbon-containing residue from at least a portion of a surface of a substrate comprising: providing a process gas comprising an oxygen source, a fluorine source, an and optionally additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 1 to about 10; activating the process gas using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the carbon-containing residue from the surface.

Method for removing carbon-containing residues from a substrate

A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.

Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials

A first aspect of a process of recovering xenon from feed gas includes: providing an adsorption vessel containing adsorbent having a Xe/Nselectivity ratio &#x3c;75; feeding into the adsorption vessel feed gas having an initial nitrogen concentration &#x3e;50% and an initial xenon concentration &#x2267;0.5%; evacuating the adsorption vessel; and purging the adsorption vessel at a purge-to-feed ratio &#x2267;10. The final xenon concentration is &#x2267;15&#xd7; the initial xenon concentration. A second aspect of the process includes providing an adsorption vessel containing adsorbent having a Xe Henry's law Constant &#x2267;50 mmole/g/atm; feeding into the adsorption vessel feed gas having an initial nitrogen concentration &#x3e;50% and an initial xenon concentration &#x2267;0.5%; heating and purging the adsorption vessel to recover xenon having a final concentration &#x2267;15&#xd7; its initial concentration. Apparatus for performing the process are also described.

Xenon recovery system

Method for processing an article comprising a mixed conducting metal oxide material, which method comprises (a) contacting the article with an oxygen-containing gas and reducing or increasing the temperature of the oxygen-containing gas; (b) when the temperature of the oxygen-containing gas is reduced, reducing the oxygen activity in the oxygen-containing gas; and (c) when the temperature of the oxygen-containing gas is increased, increasing the oxygen activity in the oxygen-containing gas.

Controlled heating and cooling of mixed conducting metal oxide materials

This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.

Method to protect internal components of semiconductor processing equipment using layered superlattice materials

A method for dry etching and chamber cleaning high dielectric constant materials is disclosed herein. In one aspect of the present invention, there is provided a process for cleaning a substance comprising a dielectric constant greater than the dielectric constant of silicon dioxide from at least a portion of a surface of a reactor comprising: introducing a first gas mixture comprising a boron-containing reactive agent into the reactor wherein the first gas mixture reacts with the substance contained therein to provide a volatile product and a boron-containing by-product; introducing a second gas mixture comprising a fluorine-containing reactive agent into the reactor wherein the second gas mixture reacts with the boron-containing by-product contained therein to form the volatile product; and removing the volatile product from the reactor.

Method for cleaning deposition chambers for high dielectric constant materials

The present invention presents a fluid separation device capable of separating oxygen from an oxygen-containing gaseous mixture which utilizes at least one solid-state membrane comprising a dense mixed conducting multicomponent metallic oxide layer formed from a mixed conducting multicomponent metallic oxide represented by the formula

Fluid separation devices capable of operating under high carbon dioxide

The present invention presents a new class of multicomponent metallic oxides which are particularly suited toward use in fabricating component used in solid-state oxygen separation devices. The compositions of the present invention are represented by the formula Ln.sub.x A'.sub.x ' Co.sub.y Fe.sub.y' Cu.sub.y' O.sub.3-z wherein Ln is an element selected from the f block lanthanides as represented by the IUPAC periodic table of the elements, A' is selected from strontium or calcium, x&gt;0, y&gt;0, y'&gt;0, x +x'=1, y +y'+y'=1, 0.ltoreq.y'&lt;0.4 and z is a number which renders the composition of matter charge neutral. These compositions provide a favorable balance of oxygen permeance, resistance of degradation when employed in such devices under high oxygen partial pressures and possess coefficients of thermal expansion which are compatible with other materials used to fabricate such devices.

Compositions capable of operating under high oxygen partial pressures

The present invention presents a new class of multicomponent metallic oxides which are particularly suited toward use in fabricating components used in solid-state oxygen separation devices. The compositions of the present invention are represented by the formula Ln.sub.x A'.sub.x' A'.sub.x' B.sub.y B'.sub.y' B'.sub.y' O.sub.3-z, wherein Ln is an element selected from the f block lanthanides, A' is selected from Group 2, A' is selected from Groups 1, 2 and 3 and the f block lanthanides, and B,B',B' are independently selected from the d block transition metals, excluding titanium and chromium, wherein 0.ltoreq.x&lt;1, 0&lt;x'&lt;1, 0.ltoreq.x'&lt;1, 0&lt;y&lt;1.1, 0&lt;y'&lt;1.1, 0&lt;y'&lt;1.1, x+x'+x'=1.0, 1.1&gt;y+y'+y'&gt;1.0 and z is a number which renders the compound charge neutral wherein such elements are represented according to the Periodic Table of the Elements adopted by IUPAC. These compositions provide superior resistance to degradation when employed in such devices under process conditions of high carbon dioxide and water partial pressures.

Coompositions capable of operating under high carbon dioxide partial

Zinc carboxylate catalysts for the copolymerization of carbon dioxide and epoxides are prepared by the reaction of zinc oxide with glutaric or adipic acid in an aprotic reaction solvent. Azeotropic distillation may be used to separate the water-solvent phase from the reaction mixture, or the catalyst may be separated from the reaction mixture by filtration and drying, generally without the need for repeated washings to remove active hydrogen atom sources. Examples of aprotic reaction solvents are toluene, dibutyl ether, anisole and ethyl benzoate.

Catalyst for the copolymerization of epoxides with CO.sub.2

A process is provided for regenerating metallo-organic catalyst used in copolymerizing carbon dioxide with epoxides to form poly(alkylene carbonates). The catalyst is a polyvalent metal dicarboxylate and the regeneration procedure involves contacting spent or deactivated catalyst with dicarboxylic acid, preferably in a slurry. In one aspect the copolymerization is carried out and catalyst is separated from the polymerization mixture, reactivated with the dicarboxylic acid, such as glutaric or adipic acid, and reused in copolymerization to form poly(alkylene carbonate).

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Kutztown, PA, United States of America

Stephen Andrew Motika