International Business Machines Corporation

Etec Systems, Inc.

Applied Materials, Inc.

Stephen A Rishton

Katherine Lynn Saenger

Lee H Veneklasen

Khalid EzzEldin Ismail

Volker Boegli

Kevin K Chan

Jack Oon Chu

Kim Yang Lee

Tai-Hon Philip Chang

Ho-Seob Kim

Weidong Wang

Raman Gobichettipalayam Viswanathan

Dieter P Kern

Michael G Rosenfield

Allan L Sagle

Walter W Molzen, Jr

Lawrence Peter Muray

Porter Dean Gerber

Ulrich Hofmann

Stacey J Winter

Jeffery K Varner

Christopher J Ashton

Huei Mei Kao

A field effect transistor and method for making is described incorporating self aligned source and drain contacts with Schottky metal-to-semiconductor junction and a T-shaped gate or incorporating highly doped semiconductor material for the source and drain contacts different from the channel material to provide etch selectivity and a T-shaped gate or incorporating a metal for the source and drain contacts and the oxide of the metal for the gate dielectric which is self aligned.

Scalable MOS field effect transistor

Provided is a technique for generating patterns with a raster scanned beam in a photolithographic system that employs a multiple blank position flash cycle. In accordance with one embodiment of the present invention, a beam creates a shadow of a first aperture that impinges upon a region of a stop, referred to as a first blank position. The beam is deflected so that the shadow of the first aperture moves along a first direction to a flash position, in which a portion thereof superimposes a second aperture located in the stop. To complete the flash cycle, the beam is deflected so that shadow of the first aperture impinges upon a second region of the stop, referred to as second blank position. As a result, during the flash cycle, the beam is deflected in one direction to impinge upon two different blank positions.

Technique for writing with a raster scanned beam

A lithography method and apparatus which represent a substrate surface as gray level values and determine a shape data that specifies a shape and position of a flash field. The apparatus receives a pattern in a vector format, represents the substrate surface as a grid of pixels, and then represents each pixel as a gray level value specifying a proportion of the pixel that includes the pattern. Subsequently the apparatus constructs a matrix of a quadrant of four pixels and surrounding pixels, modifies the matrix so that three intermediate shapes corresponding to an exposed region of the quadrant may be provided, determines an intermediate shape data of the quadrant; and performs a reverse modification on the shape to determine the shape data that specifies a flash field.

Method and apparatus that determines charged particle beam shape codes

A method and the associated apparatus for alignment and assembly of microlenses and microcolumns in which aligning structures such as rigid fibers are used to precisely align multiple microlens components. Alignment openings are formed in the microlens components and standard optical fibers are threaded through the openings in each microlens component as they are stacked. The fibers provide sufficient stiffness and stability to the structure to precisely align the apertures of the microlens components and thereby allow for increased assembly efficiency over traditional microlens and microcolumn bonding techniques.

Precision alignment and assembly of microlenses and microcolumns

An electron beam column (or other charged particle beam column) for lithography which exposes a surface to variable shapes in a raster scan. The beam column includes an electron (or ion) source that generates a charged particle beam, a transfer lens, an upper aperture, an upper deflector, a lower aperture, a lower deflector, magnetic deflection coils, and a beam objective lens. The beam is first shaped as a square in cross section by the upper aperture. The upper deflector changes the direction of the square shaped beam to pass through a specific portion of an opening defined in the lower aperture to shape the beam as desired. The lower aperture defines either a cross shaped opening or four L-shaped openings arranged as corners of a square. The combination of upper and lower apertures enable definition of exterior and interior corners as well as horizontal and vertical edges of a pattern, so that only one flash need be exposed in any one location on the surface. The lower deflector reverses any change in direction imposed by the upper deflector and further applies a retrograde scan to counteract a movement of the beam by the magnetic coils in a raster scan. The retrograde scan ensures that an exposure exposes an intended target area.

Raster shaped beam, electron beam exposure strategy using a two dimensional multipixel flash field

A converter for lithography which generates signals that control a shaping of an electron (or other energy) beam and which includes a translator that translates shape data into shape and position signals, and translates duration information into a duration signal. The converter also includes a retrograde scan circuit coupled to the translator that provides a retrograde signal that adjusts the position signal to offset a raster scan movement of the beam. The shape signals control the shaping of the beam, the position signal specifies a position of the beam for writing the shape on a substrate, and the duration signal specifies a duration of exposure of the beam on the substrate.

Apparatus and method for controlling a beam shape

A method for forming microcolumns in which laser spot welding bonds the multiple layers of an electron beam microcolumn. A silicon microlens is laser spot welded to a glass insulation layer by focusing a laser through the insulation layer onto the silicon microlens. The glass layer is transparent to the laser, allowing all of the energy to be absorbed by the silicon. This causes the silicon to heat, which, in turn, heats the adjacent surface of the glass insulation layer creating a micro-weld between the silicon and glass. The insulation layer includes a portion which protrudes beyond the edge of the first microlens so that when a second microlens is attached to the opposite side of the insulation layer, the second microlens can be laser spot welded to the protruding portion of the insulation layer by focusing a laser through the protruding portion of the insulation layer to heat the second microlens.

Microcolumn assembly using laser spot welding

A field effect transistor and method for making is described incorporating self aligned source and drain contacts with Schottky metal-to-semiconductor junction and a T-shaped gate or incorporating highly doped semiconductor material for the source and drain contacts different from the channel material to provide etch selectivity and a T-shaped gate or incorporating a metal for the source and drain contacts and the oxide of the metal for the gate dielectric which is self aligned. The invention overcomes the problem of self-aligned high resistance source/drain contacts and a high resistance gate electrode for submicron FET devices which increase as devices are scaled to smaller dimensions.

A field effect transistor and method for making the same is described wherein the field effect transistor incorporates a T-shaped gate and source and drain contacts self-aligned with preexisting shallow junction regions. The present invention provides a low resistance gate electrode and self-aligned low resistance source/drain contacts suitable for submicron FET devices, and scalable to smaller device dimensions.

Reduced parasitic resistance and capacitance field effect transistor

A proximity effect correction method for electron beam lithography suitable for high voltages and/or very dense patterns applies both backscatter and forward scatter dose corrections. Backscatter dose corrections are determined by computing two matrices, a 'Proximity Matrix' P and a 'Fractional Density Matrix' F. The Proximity Matrix P is computed using known algorithms. The elements of the Fractional Density Matrix are the fractional shape coverage in a mesh of square cells which is superimposed on a pattern of interest. Then, a Dose Correction Matrix D is computed by convolving the P and F matrices. The final backscatter dose corrections are assigned to each shape either as area-weighted averages of the D matrix elements for all cells spanned by the shape, or by polynomial or other interpolation of the dose correction field defined by the D matrix. The D matrix also provides a basis for automatic shape fracturing for optimal proximity correction. Optionally, forward scattering correction may be included in the correction process. Forward scattering correction consists of boosting the dose applied to shape i by a factor b.sub.i. These boost factors are computed in a separate and independent step which considers only forward scattering. They are combined with those resulting from the backscatter correction scheme either by simple multiplication to form the final correction factors, or by inputting them to the backscatter correction scheme as numerical weights for each shape.

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Hayward, CA, United States of America

Stephen A Rishton