Stats Chippac Pte. Ltd.

Lsi Logic Corporation

Stephen A Murphy

Wei Sun

Li-Jen Lin

Yaojian Lin

Byung Tai Do

Heap Hoe Kuan

Pandi Chelvam Marimuthu

Hin Hwa Goh

Manickam Thavarajah

Sunil A Patel

Galen C Kirkpatrick

A semiconductor device has a substrate with a contact pad. A first insulation layer is formed over the substrate and contact pad. A first under bump metallization (UBM) is formed over the first insulating layer and is electrically connected to the contact pad. A second insulation layer is formed over the first UBM. A second UBM is formed over the second insulation layer after the second insulation layer is cured. The second UBM is electrically connected to the first UBM. The second insulation layer is between and separates portions of the first and second UBMs. A photoresist layer with an opening over the contact pad is formed over the second UBM. A conductive bump material is deposited within the opening in the photoresist layer. The photoresist layer is removed and the conductive bump material is reflowed to form a spherical bump.

Semiconductor device and method of forming a dual UBM structure for lead free bump connections

A semiconductor wafer contains a plurality of semiconductor die. The wafer has contact pads formed over its surface. A passivation layer is formed over the wafer. A stress buffer layer is formed over the passivation layer. The stress buffer layer is patterned to expose the contact pads. A metal layer is deposited over the stress buffer layer. The metal layer is a common voltage bus for the semiconductor device in electrical contact with the contact pads. An adhesion layer, barrier layer, and seed layer is formed over the wafer in electrical contact with the contact pads. The metal layer is mounted to the seed layer. Solder bumps or other interconnect structures are formed over the metal layer. A second passivation layer is formed over the metal layer. In an alternate embodiment, a wirebondable layer can be deposited over the metal layer and wirebonds connected to the metal layer.

Semiconductor device and method of providing common voltage bus and wire bondable redistribution

A semiconductor chip fabrication assembly and method including a semiconductor package having a packaging substrate and a semiconductor die. An active circuit surface of the semiconductor die is positioned adjacent to a contact surface of the packaging substrate such that a substantially thin gap is formed therebetween. A semi-rigid shroud device is provided which defines a vacuum chamber configured to extend around the gap to hermetically seal the gap within the vacuum chamber. A dispensing device is provided having an outlet end positioned proximate the gap in the vacuum chamber which is adapted to vacuum flow the bonding material between the electrical contacts in the gap, and between the active circuit surface and the contact surface. The absence of air and any other gases forms a substantially voidless underfill layer of bonding material in the gap.

Vacuum assisted underfill process and apparatus for semiconductor

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San Jose, CA, United States of America

Stephen A Murphy