Princeton University

Other

Element Six Technologies Limited

Stephen A Lyon

Daniel James Twitchen

Matthew Lee Markham

Andrew Mark Edmonds

Nathalie De Leon

Alexei M Tyryshkin

Brendon C Rose

Ding Huang

Igor Trofimov

Zi-Huai Zhang

Sorawis Sangtawesin

Eric A Shaner

Srikanth Srinivasan

Igor E Trofimov

Disclosed are synthetic diamond materials for quantum and optical applications, such as quantum information processing, quantum key distribution, quantum repeaters, and quantum sensing devices, based on spin defects in diamond. This includes methods for synthesizing and treating diamond in order to create spin defects with improved spin coherence and optical emission properties, as well as treating the diamond to eliminate unwanted defects that degrade these properties.

Synthetic engineered diamond materials with spin impurities and methods of making the same

A system and method for determining the concentration of analytes of interest in complex matrices is provided. According to one aspect of the present invention, near-infrared analytical radiation is generally directed onto a portion of a specimen containing the analyte of interest. A wavelength of the analytical radiation is scanned over the specimen over a broad range of frequencies and over a short duration of diagnostic time. A spectrum of radiation is transmitted through, reflected from or scattered from the specimen and collected by a detector. The concentration of the analyte of interest in the specimen is determined by the radiation collected by the detector.

Non-invasive detection of analytes in a complex matrix

The present invention relates to a method and apparatus for measuring material properties using guided-wave THz spectroscopy to measure the complex dielectric functions of materials. A high frequency wave is created and launched along a waveguide positioned in close proximity to a material under test. The wave is sampled initially, allowed to propagate, and sampled again. The samples are processed to derive information, such as resistivity, of the wafer. The method and apparatus of the present invention not only allows one to obtain information about the DC conductivity of metals, but also provides information about the high frequency behavior of materials&mdash;metals, and dielectrics as well&mdash;which is becoming particularly useful at the time when processor clocks are running at frequencies approaching GHz levels. The present invention provides for non-contact, non-destructive, non-contaminating testing.

Method and apparatus for non-contact measurement of electrical properties of materials

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Cranbury, NJ, United States of America

Stephen A Lyon