Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Stephanie Huet

Abdenacer Ait-Mani

Lea Di Cioccio

Pierre Juliet

A method for obtaining a heterogeneous substrate intended for use in the production of a semiconductor comprises the following steps: (a) obtaining a first substrate () made from a type II-VI or type III-V material and a second substrate (), each substrate being substantially planar and each substrate having a pre-determined surface area; (b) grinding a non-through recess () into the second substrate (), the surface area of said recess being greater than the surface area of the first substrate, such that the first substrate can be housed in the recess; (c) depositing a bonding material () in the recess (); (d) depositing the first substrate () in the recess () of the second substrate and securing the first substrate in the second substrate at a temperature below 300&#xb0; C.; and (e) leveling the first and second substrates in order to obtain a heterogeneous substrate having a substantially planar face ().

Method for obtaining a heterogeneous substrate for the production of semiconductors

A method for producing at least one photosensitive infrared detector by assembling a first electronic component including plural photodiodes sensitive to infrared radiation and a second electronic component including at least one electronic circuit for reading the plurality of photodiodes, an infrared detector, and an assembly for producing such a detector, the method including: production, on each one of the first and second components, of a connection face formed at least partially by a silicon oxide (SiO2)-based layer; bonding the first component and the second component by the connection faces thereof, thus performing the direct bonding of the two components. The method can simplify hybridization of heterogeneous components for producing an infrared detector.

Method for producing photosensitive infrared detectors

The invention concerns a method for making a photovoltaic cell based on thin film silicon, which consists in providing a heterojunction by depositing on a support at least one first P&#x2014; (or N&#x2014;) doped amorphous silicon layer () and a second N&#x2014; (or P&#x2014;) doped amorphous silicon layer (), in crystallizing, at least partly, the at least one first layer () using a technology for crystallizing silicon by pulsed electronic beam.

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Beaulieu sur Loire, France

Stephanie Huet