Thomson-csf

Stephane Tyc

Alain Schuhl

Thierry Valet

Alain Friederich

A transducer contains at least one layer of a composite material containing particles of a conducting magnetic material in a non-magnetic and insulating or semiconductor matrix material and two electrodes deposited on at least one face of the layer for measuring resistance of the layer.

Magnetoresistive transducer or magnetic read head including a layer of

A sensor of weak magnetic fields with magnetoresistive effect features a metallic multilayer formed by alternating magnetic and non-magnetic metals. In order to detect weak fields, a sensor is described wherein a magnetic field is coupled by an anti-ferromagnetic type coupling with a first neighboring magnetic layer and by a ferromagnetic type coupling with a third neighboring magnetic layer, so that there is frustration of coupling. The first and third magnetic layers are blocked by their strong coercive field. The sensor finds particular application to detection on magnetic media.

Sensor of weak magnetic fields, with magnetoresistive effect

Disclosed is a transistor or diode type Josephson effect device, at least two electrodes of which are made of superconductive material. If the Josephson effect is to be exerted in a semiconductor layer between the access electrodes, the distance between them should be smaller than the length of coherence, namely 10 to 1000 angstroms. According to the disclosure, the control channel between access electrodes is replaced by two channels perpendicular to the semiconductor layer, located between the two access electrodes and a layer of superconductive material placed between the substrate and the semiconductor layer. The disclosure can be applied to transistors, phototransistors and diodes with high switching speed.

Josephson effect semiconductor device with channel layers of

A field-effect transistor comprises, on a substrate, a layer of semiconductor material incorporating natural or artificial inclusions of superconducting material. The source, drain and gate electrodes are made on this layer. Applications: field-effect transistors with low gate control voltage. FIG. 3.

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Paris, France

Stephane Tyc