Stmicroelectronics (crolles 2) Sas

Stmicroelectronics S.a.

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics Gmbh

Centre National De La Recherche Scientifique

Stmicroelectronics International N.v.

Universite Claude Bernard – Lyon1

Institut National Des Sciences Appliquees De Lyon

Socpra Sciences Et Genie S.e.c.

Stephane Monfray

Thomas Skotnicki

Frédéric Boeuf

Sébastien Cremer

Philippe Coronel

Christophe Maitre

Nicolas J Loubet

Olivier Le Neel

Pascal Ancey

Philippe Delpech

Ronald Kevin Sampson

Christophe Regnier

Olga Kokshagina

Ulrich Soupremanien

Emmanuel Dubois

Getenet Tesega Ayele

Arthur Arnaud

Jean-Francois Robillard

Didier Dutartre

Frederic Gaillard

Michel Haond

Guillaume Savelli

Sandrine Lhostis

Emmanuel Ollier

Emmanuel Josse

Marios Barlas

Skandar Basrour

Luc Guy Frechette

Paul Muralt

Alexandre Talbot

Stephane Zoll

Sebastien Boisseau

Karim Segueni

Onoriu Puscasu

Gholamreza Mirshekari

Guillaume Beaudin

Emilie Trioux

Daniel Chanemougame

Alain Fleury

Gaspard Hiblot

Siddhartha Dhar

Kirill Shiianov

Regis Orobtchouk

Paul Charette

Jihane Boughaleb

Michele Calvo

Etienne Leveille

A phase change filter is formed by an arrangement of dots, wherein each dot is made of a phase change material. A heating layer of electrically conductive material extends under the arrangement of dots. Current passing through the heating layer changes the dots between two states to alter attenuation of light passing through the filter.

Planar cell nanoheater design and cell architecture for programmable phase change filters

An optical filter includes a carrier layer made of a first material. A periodic grating of posts is disposed on the carrier layer in a periodic pattern configured by characteristic dimensions. The posts are made of a second material. A layer made of a third material encompasses the periodic grating of posts and covers the carrier layer. The third material has a refractive index that is different from a refractive index of the second material. Characteristic dimensions of the periodic grating of posts are smaller than an interfering wavelength and are configured to selectively reflect light at the interfering wavelength on the periodic grating of posts.

Optical filter and corresponding manufacturing method

The present disclosure relates to an electronic circuit comprising a semiconductor substrate, radiofrequency switches corresponding to MOS transistors comprising doped semiconductor regions in the substrate, at least two metallization levels covering the substrate, each metallization level comprising a stack of insulating layers, conductive pillars topped by metallic tracks, at least two connection elements each connecting one of the doped semiconductor regions and formed by conductive pillars and conductive tracks of each metallization level. The electronic circuit further comprises, between the two connection elements, a trench crossing completely the stack of insulating layers of one metallization level and further crossing partially the stack of insulating layers of the metallization level the closest to the substrate, and a heat dissipation device adapted for dissipating heat out of the trench.

Electronic circuit comprising a RF switches having reduced parasitic capacitances

An embodiment sensor includes a hybrid waveguide. The hybrid waveguide includes a first dielectric optical waveguide lying on and in contact with a dielectric support layer; a first surface waveguide optically coupled to the first dielectric optical waveguide, parallel to the first dielectric optical waveguide, and lying on the dielectric support layer. The first surface waveguide has a lateral surface configured to guide a surface mode. The hybrid waveguide includes a cavity intended to be filled with a dielectric fluid, separating laterally the first dielectric optical waveguide from the lateral surface of the first surface waveguide.

Wave guide sensor

The present disclosure relates to a method including the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.

Phase modulator device and method

An electro-optical phase modulator includes a waveguide made from a stack of strips. The stack includes a first strip made of a doped semiconductor material of a first conductivity type, a second strip made of a conductive material or of a doped semiconductor material of a second conductivity type, and a third strip made of a doped semiconductor material of the first conductivity type. The second strip is separated from the first strip by a first interface layer made of a dielectric material, and the third strip is separated from the second strip by a second interface layer made of a dielectric material.

Electro-optical phase modulator

A light sensor includes a semiconductor substrate supporting a number of pixels. Each pixel includes a photoconversion zone extending in the substrate between a front face and a back face of the substrate. An optical diffraction grating is arranged over the back face of the substrate at a position facing the photoconversion zone of the pixel. For at least two different pixels of the light sensor, the optical diffraction gratings have different pitches. Additionally, the optical grating of each pixel is surrounded by an opaque wall configured to absorb at operating wavelengths of the sensor.

Light sensor using pixel optical diffraction gratings having different pitches

The present disclosure relates to a method comprising the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.

A light sensor includes a first pixel and a second pixel. Each pixel has a photoconversion area. A band-stop Fano resonance filter is arranged over the first pixel. The second pixel includes no Fano resonance filter. Signals output from the first and second pixels are processed to determine information representative of the quantity of light received by the light sensor during an illumination phase in a rejection band of the band-stop Fano resonance filter.

Light sensor comprising a band-stop fano resonance filter over a photoconversion area

A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.

Photonic devices and methods of fabrication thereof

A detection stage of an electronic detection device, for example a pH meter, includes an insulating region that receives an element to be analyzed. The insulating region is positioned on a sensing conductive region. A biasing stage includes an electrically conductive region which is capacitively coupled to the conductive region. The electrically conductive region is formed in an uppermost metallization level along with a further conductive region. That further conductive region is electrically connected to the sensing conductive region by a via passing through an insulating layer which insulates the electrically conductive region from the sensing conductive region.

Detection device, in particular incorporated in a PH meter, and corresponding production process

A thermo-electric generator includes a semiconductor membrane with a phononic structure containing at least one P-N junction. The membrane is suspended between a first support designed to be coupled to a cold thermal source and a second support designed to be coupled to a hot thermal source. The structure for suspending the membrane has an architecture allowing the heat flux to be redistributed within the plane of the membrane.

Thermo-electric generator

In one aspect, a photonic device includes a first region having a first doping type, where the first region is divided into an upper portion made of silicon-germanium and a lower portion made of silicon. The device further includes a second region having a second doping type. The first region and the second region contact to form a vertical PN junction.

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Eybens, France

Stephane Monfray