Honeywell International Inc.

Stephane Ferrasse

Frank C Alford

Susan D Strothers

Patrick K Underwood

Vladimir M Segal

Jaeyeon Kim

Marc D Ruggiero

William B Willett

Werner Hort

Wayne D Meyer

Shih-Yao Lin

Michael R Pinter

Chi Tse Wu

Ira G Nolander

Jianxing Li

Scott R Sayles

Suresh Sundarraj

Robert Prater

Wuwen Yi

Erik L Turner

Jeffrey J Schaefer

Lucia M Feng

Vince Speziale

Harold A Detlaff

Stuart D Wright

Andrew N A Wragg

Susanne Grabmeier

Andrew Wragg

Frank A Alford

Patrick Underwood

Diane L Morales

Xinlin Shi

A high strength aluminum alloy material comprises aluminum as a primary component and at least one of magnesium and silicon as a secondary component at a concentration of at least 0.2% by weight. The material has a Brinell hardness of at least 90 BHN, a yield strength of at least 250 MPa, an ultimate tensile strength of at least 275 MPa, and a percent elongation of at least 11.5%.

ECAE processing for high strength and high hardness aluminum alloys

A sputtering target comprising a sputtering material and having a non-planar sputtering surface prior to erosion by use in a sputtering system, the non-planar sputtering surface having a circular shape and comprising a central axis region including a concave curvature feature at the central axis region. The central axis region having a wear profile after erosion by use in a sputtering system for at least 1000 kWhrs including a protuberance including a first outer circumferential wear surface having a first slope. A reference, protruding convex curvature feature for a reference target after sputtering use for the same time includes a second outer circumferential wear surface having a second slope. The protuberance provides a sputtered target having reduced shadowing relative to the reference, protruding convex curvature feature, wherein the first slope is less steep than a second slope.

Profiled sputtering target and method of making the same

A method of forming a high strength aluminum alloy is disclosed. The method includes solutionizing to a temperature ranging from about 5&#xb0; C. above a standard solutionizing temperature to about 5&#xb0; C. below an incipient melting temperature for the aluminum material to form a heated aluminum material, which is then quenched. The aluminum material includes at least one of magnesium and silicon as a secondary component at a concentration of at least 0.2% by weight. The cooled aluminum material is subjected to ECAE processing using one of isothermal conditions and non-isothermal conditions. Isothermal conditions include having a billet and a die at the same temperature from about 80&#xb0; C. to about 200&#xb0; C. Non-isothermal conditions include having a billet at a temperature from about 80&#xb0; C. to about 200&#xb0; C. and a die at a temperature of at most 100&#xb0; C. The aluminum material is than aged at a temperature from about 100&#xb0; C. to about 175&#xb0; C.

The present disclosure relates generally to a planar sputtering target. In particular, the present disclosure provides a planar sputtering target comprising a planar sputtering surface and a back surface opposite the planar sputtering surface. The planar sputtering target is formed from a 2N purity tin having an average grain size from at least 10 mm to at most 100 mm. The present disclosure provides a method of manufacturing the tin planar sputtering target having an average grain size from at least 10 mm to at most 100 mm.

Large-grain tin sputtering target

Disclosed herein is a method of forming a high strength aluminum alloy. The method comprises heating an aluminum material to a solutionizing temperature for a solutionizing time such that the magnesium and zinc are dispersed throughout the extruded aluminum material to form a solutionized aluminum material. The method includes quenching the solutionized aluminum material to form a quenched aluminum material. The method also includes aging the quenched aluminum material to form an aluminum alloy, then subjecting the aluminum alloy to an ECAE process to form a high strength aluminum alloy.

ECAE materials for high strength aluminum alloys

A sputtering target comprising a forged aluminum material having an average grain size between about 15 and 55 microns. The aluminum material has at least one of the following: a homogeneous texture with minimal texture banding as measured by banding factor B below about 0.01; a texture gradient H of less than 0.2; or either weak (200) texture or near random texture characterized by maximum intensity of inverse pole figure less than 3 times random in multiple directions.

Frictionless forged aluminum alloy sputtering target with improved properties

A method of forming a high strength aluminum alloy. The method comprises subjecting an aluminum material containing at least one of magnesium, manganese, silicon, copper, and zinc at a concentration of at least 0.1% by weight to an equal channel angular extrusion (ECAE) process. The method produces a high strength aluminum alloy having an average grain size from about 0.2 &#x3bc;m to about 0.8 &#x3bc;m and a yield strength from about 300 MPa to about 650 MPa.

A method of forming a copper manganese sputtering target including subjecting a copper manganese billet to a first unidirectional forging step, heating the copper manganese billet to a temperature from about 650&#xb0; C. to about 750&#xb0; C., subjecting the copper manganese billet to a second unidirectional forging step, and heating the copper manganese billet to a temperature from about 500&#xb0; C. to about 650&#xb0; C. to form a copper alloy.

Method of forming copper alloy sputtering targets with refined shape and microstructure

A method of forming a high strength aluminum alloy. The method comprises heating an aluminum material including scandium to a solutionizing temperature of the aluminum material such that scandium is dispersed throughout the aluminum material to form an aluminum alloy. The method further comprises extruding the aluminum alloy with equal channel angular extrusion to form a high strength aluminum alloy, such that the high strength aluminum alloy has a yield strength greater than about 40 ksi after being at a temperature from about 300&#xb0; C. to about 400&#xb0; C. for at least one hour.

High strength aluminum alloy backing plate and methods of making

A method of forming a high strength copper alloy. The method comprises heating a copper material including from about 2 wt. % to about 20 wt. % manganese by weight of the copper material to a temperature above 400&#xb0; C., allowing the copper material to cool to a temperature from about 325&#xb0; C. to about 350&#xb0; C. to form a cooled copper material, and extruding the cooled copper material with equal channel angular extrusion to form a cooled copper manganese alloy.

Copper manganese sputtering target

Sputtering targets are described that comprise: a) a target surface component comprising a target material; b) a core backing component having a coupling surface, a back surface and at least one open area, wherein the coupling surface is coupled to at least part of the target surface component; and wherein at least part of the target surface component fits into at least one open area of the core backing component. In some embodiments, the target surface component, the core backing component or a combination thereof have at least one surface area feature coupled to or located in the back surface of the core backing component, the target surface component or a combination thereof, wherein the surface area feature increases the cooling effectiveness of the target surface component. Methods of forming a sputtering target are also described that comprises: a) providing a target surface component comprising a surface material; b) providing a core backing component having a coupling surface, a back surface and at least one open area; c) coupling the coupling surface to at least part of the target surface component, wherein at least part of the target surface component fits into the at least one open area of the core backing component.

Target designs and related methods for coupled target assemblies, methods of production and uses thereof

The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.

Copper sputtering targets and methods of forming copper sputtering targets

The invention includes backing plates having coolant deflectors with at least a portion of each of the deflectors being nonlinear. Projections projecting from the backing plate are configured to insert into openings within a sputtering target. The invention includes targets having at least one opening to receive a fastener extending into the target through a back surface. The invention includes a target assembly having projections projecting from the backing plate and insertable within openings within the target. The invention includes a target assembly having a plurality of coolant deflectors disposed between the target and the backing plate. A segment of each of the deflectors is nonlinear. The invention includes methods of cooling a target. Coolant deflectors are disposed within a gap between the target and a backing plate with coolant deflectors being nonlinear along at least a portion of their length.

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Spokane, WA, United States of America

Stephane Ferrasse