Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Centre National De La Recherche Scientifique

Universite Claude Bernard – Lyon1

Cpe Lyon Formation Continue Et Recherche

Stéphane Cadot

Francois Martin

Chloé Thieuleux

François Martin

Rémy Gassiloud

Elsje Quadrelli

Method for manufacturing a thin layer of textured AlN comprising the following successive steps: a) providing a substrate having an amorphous surface, b) forming a polycrystalline nucleation layer of MSwith M=Mo, W or one of the alloys thereof, on the amorphous surface of the substrate, the polycrystalline nucleation layer consisting of crystalline domains the base planes of which are parallel to the amorphous surface of the substrate, the crystalline domains being oriented randomly in an (a, b) plane formed by the amorphous surface of the substrate, c) depositing aluminum nitride on the nucleation layer, leading to the formation of a thin layer of textured AlN.

Method for manufacturing a layer of textured aluminum nitride

A method of preparing a crystalline thin film having a formula MYincludes (1) preparing an MYamorphous film by atomic layer deposition on a surface of a substrate, and (2) annealing the amorphous MYfilm at 350&#xb0; C. or more to provide the crystalline MYfilm. The amorphous MYfilm is formed from at least one metal M precursor and at least one element Y precursor, wherein x is 1.5 to 3.1, M is tungsten or molybdenum, and Y is sulfur or selenium. Step (1) includes a) introducing a first metal M precursor or element Y precursor into a deposition chamber, b) purging with inert gas, c) introducing a second metal M precursor when the first precursor is element Y, or element Y precursor when the first precursor is metal M, d) purging with inert gas, e) repeating steps a) to d), and f) obtaining the amorphous MYfilm.

Method of forming a crystalline thin film having the formula MYusing an ALD-formed amorphous thin film having the formula MYas a precursor

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Genay, France

Stéphane Cadot