Silicon Storage Technology, Inc.

Other

Wege, Stephan

Stephan Wege

Nhan Do

Xian Liu

Gerhard Metzger-Brueckl

Mandana Tadayoni

Yueh-Hsin Chen

Willem-Jan Toren

Nadia Miridi

Cecile Bernardi

Liz Cuevas

Florence Guyot

Henry Om'mani

Chien-Sheng Su

Chieng-Sheng Su

The invention relates to a gas injector () for supplying gas or a gas mixture to a reaction region (). The gas injector () contains a main part () with a gas channel (). Furthermore, a gas feed () is provided for the gas channels (). The gas or the gas mixture reaches the reaction region () from the gas channel () via a first opening () or a first group () of openings () in the main part. The main part () is equipped with a second opening () or a second group () of openings () via which the gas of the gas mixture likewise reaches the reaction region () from the gas channel (). Each of the openings () or the groups () of openings () is paired with a respective separate gas feed () in the main part () on the gas channel ().

Gas injector for reaction regions

A stack gate structure for a non-volatile memory array has a semiconductor substrate having a plurality of substantially parallel spaced apart active regions, with each active region having an axis in a first direction. A first insulating material is between each stack gate structure in the second direction perpendicular to the first direction. Each stack gate structure has a second insulating material over the active region, a charge holding gate over the second insulating material, a third insulating material over the charge holding gate, and a first portion of a control gate over the third insulating material. A second portion of the control gate is over the first portion of the control gate and over the first insulating material adjacent thereto and extending in the second direction. A fourth insulating material is over the second portion of the control gate.

Method of forming a self-aligned stack gate structure for use in a non-volatile memory array

Self-aligned stack gate structure for use in a non-volatile memory array and a method of forming such structure

Growing community of inventors

Bannewitz-Cunnersdorf, Germany

Stephan Wege