Evonik Degussa Gmbh

Stephan Traut

Matthias Patz

Stephan Wieber

Joachim Erz

Odo Wunnicke

Patrik Stenner

Harald Stüger

Jutta Hessing

Michael Coelle

Paul Henrich Woebkenberg

Christoph Mader

Harald Stueger

Janette Klatt

Christoph Walkner

Miriam Deborah Malsch

Jasmin Lehmkuhl

Paul Henrich Wöbkenberg

Christian Guenther

Susanne Christine Martens

Michael Cölle

Paul Henrich WÖBKENBERG

Michael CÖLLE

The present invention relates to formulations comprising at least one hydridosilane of the generic formula SiHwith n=3-6 and at least one hydridosilane oligomer, to processes for preparation thereof and to the use thereof.

Formulations comprising hydridosilanes and hydridosilane oligomers, their process of manufacture and their use

The present invention relates to formulations comprising at least one hydridosilane of the generic formula SiHwith n=7-10 and at least one hydridosilane oligomer, to processes for preparation thereof and to the use thereof.

The present invention relates to a liquid-phase method for doping a semiconductor substrate, characterized in that a first composition containing at least one first dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the first composition; a second composition containing at least one second dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the second composition, where the one or more region(s) coated with the first composition and the one or more region(s) coated with the second composition are different and do not overlap significantly and where the first dopant is an n-type dopant and the second dopant is a p-type dopant or vice versa; the regions of the surface of the semiconductor substrate coated with the first composition and with the second composition are each fully or partly activated; optionally, the unactivated regions of the surface of the semiconductor substrate coated with the first composition and with the second composition are each oxidized; and the semiconductor substrate is heated to a temperature at which the dopants diffuse out of the coating into the semiconductor substrate. The invention further relates to the semiconductor obtainable by the method and to the use thereof, especially in the production of solar cells.

Method for producing differently doped semiconductors

The present invention relates to a liquid-phase process for producing structured silicon- and/or germanium-containing coatings by the application to a substrate of at least one coating composition, the partial activation of the resulting coating on the coated substrate, and oxidation of non-activated coating on the substrate, to the coats produced by the process and to their use.

Process for producing structured coatings

The present invention provides processes for preparing carbon-containing hydridosilanes, in which an optionally boron- or phosphorus-doped hydridosilane is reacted without catalyst and reducing agent with at least one carbon source selected from linear, branched or cyclic carbosilanes, halogenated hydrocarbons, carbenes, alkyl azides, diazomethane, dimethyl sulphate or alcohols, the carbon-containing hydridosilane oligomers obtainable by the process and the use thereof.

Method for producing hydrosilanes containing carbon

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Loerrach Brombach, Germany

Stephan Traut