Infineon Technologies Ag

Stephan Schmitt

Juergen Zimmer

Horst Theuss

Mathias Vaupel

Helmut Wietschorke

Markus Loehndorf

Matthias Boehm

Steven Gross

Wolfgang Raberg

Manfred Ruehrig

Bernhard Winkler

Joachim Wecker

Thomas Bever

Eckard Quandt

G&uuml;nter Ehrler

A pressure sensor module including a housing, a pressure sensor chip, and one or more of an integrated passive device (IDP) chip and discrete passive devices are disclosed. The pressure sensor chip and one or more of the IPD chip and the discrete passive devices are arranged within the housing.

Pressure sensor module having a sensor chip and passive devices within a housing

A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate. The magnetoresistive device further includes a first free layer embedded in the electrically insulating layer and a second free layer embedded in the electrically insulating layer. The first free layer and the second free layer are separated by a portion of the electrically insulating layer.

Magnetoresistive devices and methods for manufacturing magnetoresistive devices

A sensor includes a substrate having a mechanically deformable region that is deformable in a direction non-parallel to a surface of the substrate, and a magnetostrictive multi-layer sensor element configured to detect a mechanical deformation of the mechanically deformable region in a direction that is non-parallel to the substrate surface. The multi-layer sensor element includes a sensor layer having a material having a positive or a negative magnetostriction constant. The sensor further includes a device, arranged on the substrate, that is configured to generate a controllable magnetic field by which a performance of the magnetostrictive multi-layer sensor element is influenced, wherein the magnetostrictive multi-layer sensor element exhibits an electrical resistance that is a function of the controllable magnetic field and a deformation of the mechanically deformable region.

Magnetostrictive multi-layer sensor for detecting a deformation

The invention relates to a force sensor having a layer sequence for determining a force acting on the layer sequence along a predefined force axis. The layer sequence includes, arranged successively in a vertical direction, a first magnetic layer with a first magnetization direction, a separating layer and a second magnetic layer with a second magnetization direction. Here, the first magnetization direction is secured with respect to the layer sequence. The second magnetic layer has a magnetostriction constant that is different from zero and a uniaxial magnetic anisotropy with an anisotropy axis. The uniaxial magnetic anisotropy is generated using shape anisotropy. The second magnetization direction encloses an angle of more than 0&#xb0; and less than 90&#xb0; with the force axis in the quiescent state, and the anisotropy axis encloses an angle of more than 0&#xb0; and less than 90&#xb0; with the force axis.

Force sensor array having magnetostrictive magnetoresistive sensors and method for determining a force

A sensor has a substrate in which a mechanically deformable area is formed. A first magnetostrictive multilayer sensor element and a second magnetostrictive multilayer sensor element are formed in the mechanically deformable area, wherein the first magnetostrictive multilayer sensor element and the second magnetostrictive multilayer sensor element are connected to each other and implemented such that when generating a mechanical deformation of the mechanically deformable area, the electric resistance of the first magnetostrictive multilayer sensor element changes in an opposite way to the electric resistance of the second magnetostrictive multilayer sensor element, or the electric resistance of the first magnetostrictive multilayer sensor element remains unchanged.

Magnetostrictive multilayer sensor and method for producing a sensor

A sensor has a substrate having a mechanically deformable region, a magnetostrictive spin-valve sensor element being arranged to detect a mechanical deformation of the mechanically deformable region. On the substrate, there is a device for generating a controllable magnetic field by which a performance of the sensor element is influenced.

Deformation sensor and method for detecting a deformation

The invention relates to a semiconductor sensor having a base element (,) and at least one deformation element (,). The deformation element (,) is composed of a semiconductor substrate that is doped with a dopant of a first conductivity type. Piezoresistors (,) that are doped with a dopant of the opposite conductivity type are located in the deformation element (,). The deformation element (,) has at least one part that is in contact with a medium. The semiconductor sensor is characterized in that the part has a lower concentration of the dopant than a further region located between it and the piezoresistor (,).

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Munich, Germany

Stephan Schmitt