Osram Opto Semiconductors Gmbh

Stephan Preuβ

Herbert Brunner

Michael Zitzlsperger

Simon Jerebic

Markus Pindl

Hans-Christoph Gallmeier

Harald Jäger

Hansjörg Schöll

Caroline Kistner

A method for producing an optoelectronic thin-film chip semiconductor device is specified. A conductor structure is applied on a carrier and a multiplicity of optoelectronic semiconductor chips are arranged between the conductor structures. Each of the optoelectronic semiconductor chips includes a layer at a top side. Furthermore, electrical connections between semiconductor chip and the conductor structure are established, for instance using a bonding wire. The semiconductor chips and the conductor structure are surrounded with a molded body. The molded body does not project beyond the optoelectronic semiconductor chips at the top side thereof facing away from the carrier. Moreover, the carrier is removed and the semiconductor chips surrounded by molding are singulated.

Method for producing an optoelectronic semiconductor device, and optoelectronic semiconductor device

An optoelectronic component comprising an optoelectronic semiconductor chip () having a contact side () and a radiation coupling-out side () situated opposite; a chip carrier (), on which the semiconductor chip () is applied via its contact side (); a radiation conversion element () applied on the radiation coupling-out side (); and a reflective potting compound (), which is applied on the chip carrier () and laterally encloses the semiconductor chip () and the radiation conversion element (); wherein the potting compound () adjoins an upper edge of the radiation conversion element () in a substantially flush fashion, such that a top side of the radiation conversion element () is free of the potting compound ().

Optoelectronic component and method for producing an optoelectronic component

A method of producing an optoelectronic component includes providing a cavity; introducing a liquid matrix material with phosphor particles distributed therein into the cavity; introducing a semiconductor chip into the matrix material; sedimenting the phosphor particles in the matrix material; and curing the matrix material, wherein a conversion layer including phosphor particles is produced, said conversion layer being arranged on the semiconductor chip.

Method for producing an optoelectronic component, and optoelectronic component

An optoelectronic semi-conductor component includes a first carrier having a top side and an underside laying opposite the top side of the first carrier, wherein the first carrier has a first and a second region; at least one optoelectronic semiconductor chip arranged at the top side on the first carrier; and at least one electronic component arranged in the second region at the underside of the first carrier, wherein the first region has a greater thickness in a vertical direction than the second region, wherein, at the underside, the first region projects beyond the second region in a vertical direction, and the at least one electronic component is electrically conductively connected to the at least one optoelectronic semi-conductor chip.

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Bad Abbach, Germany

Stephan Preuβ