Infineon Technologies Ag

Siemens Aktiengesellschaft

Infineon Technologies LLC

Hydraulik-ring Gmbh

Stephan Pindl

Alfons Dehe

Carsten Ahrens

Bernhard Knott

Dominic Maier

Daniel Lugauer

Hans-Joachim Schulze

Christoph Glacer

Ulrich Krumbein

Joerg Ortner

Stefan Jost

Prashanth Makaram

Alexander Zoepfl

John Cooper

Martin Lankes

Edward Fuergut

Dethard Peters

Werner Weber

Stefan Barzen

Friedrich Graf

Marc Fueldner

Andre Brockmeier

Wolfgang Friza

Roland Meyer

Daniel Porwol

Markus Biebl

Johann Strasser

Matthias Steiert

Andreas Wild

Wolfgang Weigert

Caterina Travan

Philipp Sebastian Koch

Thomas Claus

Bernd Last

Peter Michau

Martin Lachmayr

Tanja Roy

Stefan Lauer

Ernst Nock

Thomas Schmidt

Matthias Reinwald

Martin Manz

Tibor Kiss

Sebastian Wittmann

Josef Schaetz

A power semiconductor device includes a semiconductor body having a front side surface, and a first passivation layer arranged above the front side surface. The first passivation layer is a polycrystalline diamond layer.

Power semiconductor device and method

An infrared emitter with a glass lid for emitting infrared radiation comprises a package enclosing a cavity, wherein a first part is transparent for infrared radiation and a second part comprises a glass material and a heating structure configured for emitting the infrared radiation, wherein the heating structure is arranged in the cavity between the first part and the second part of the package.

IR emitter with glass lid

An apparatus includes a semiconductor-based substrate with a functional structure that is formed in or on the semiconductor-based substrate. The apparatus includes a frame structure surrounding the functional structure and includes a coating that covers the functional structure and is delimited by the frame structure.

Apparatus having a functional structure delimited by a frame structure and method for producing same

A power semiconductor device includes: a semiconductor body having a front side and a backside and configured to conduct a load current between the front side and the backside; and a plurality of control cells configured to control the load current. Each control cell is at least partially included in the semiconductor body at the front side and includes a gate electrode that is electrically insulated from the semiconductor body by a gate insulation layer. The gate insulation layer is or includes a first boron nitride layer.

A method for providing a semiconductor layer arrangement on a substrate which comprises providing a semiconductor layer arrangement having a functional layer and a semiconductor substrate layer, attaching the semiconductor layer arrangement to a glass substrate layer such that the functional layer is arranged between the glass substrate layer and the semiconductor substrate layer, and removing the semiconductor substrate layer at least partially such that the glass substrate layer substitutes the semiconductor substrate layer as the substrate of the semiconductor layer arrangement.

Method and structure for sensors on glass

A method for manufacturing integrated IR (IR=infrared) emitter elements having an optical filter comprises back side etching through a carrier substrate, forming adhesive spacer elements on a conductive layer on the carrier substrate, placing a filter substrate having a filter carrier substrate and a filter layer on the adhesive spacer elements, fixing the adhesive spacer elements to the carrier substrate and the filter substrate by curing, pre-dicing through the filter substrate for exposing the contact pads of the structured conductive layer, and dicing through the frame structure in the carrier substrate for separating the integrated IR emitter elements having the optical filter.

Wafer level method for manufacturing integrated infrared (IR) emitter elements having an optical IR filter placed on the main surface region of the carrier substrate on which the IR emitter is formed

According to an embodiment, a sensor package includes an electrically insulating substrate including a cavity in the electrically insulating substrate, an ambient sensor, an integrated circuit die embedded in the electrically insulating substrate, and a plurality of conductive interconnect structures coupling the ambient sensor to the integrated circuit die. The ambient sensor is supported by the electrically insulating substrate and arranged adjacent the cavity.

System and method for a transducer in an EWLB package

In accordance with an embodiment, a method for producing a graphene-based sensor includes providing a carrier substrate; forming a carrier structure on the carrier substrate, wherein one or more separating structures are formed on an upper side of the carrier structure; and performing a wet chemical transfer of a graphene layer onto the upper side of the carrier structure that comprises the separating structures, where the separating structures and a tear strength of the graphene layer are matched to one another such that the graphene layer respectively tears at the separating structures during the wet chemical transfer.

Method for producing a graphene-based sensor

A light emitter device includes an emitter component including a heater structure arranged on a membrane structure. The membrane structure is located above a first cavity. Additionally, the first cavity is located between the membrane structure and at least a portion of a supporting substrate of the emitter component. Further, the heater structure is configured to emit light, if a predefined current flows through the heater structure. Additionally, the light emitter device includes a lid substrate having a recess. The lid substrate is attached to the emitter component so that the recess forms a second cavity between the membrane structure and the lid substrate. Further, a pressure in the second cavity is less than 100 mbar.

Light emitter devices, photoacoustic gas sensors and methods for forming light emitter devices

The present disclosure relates to an apparatus having a substrate arrangement with a first circuit arrangement that heats up during operation and a second circuit arrangement that is integrated into a substrate material of the substrate arrangement. Further, the apparatus has a cavity structure that is arranged between the first and the second circuit arrangement, said cavity structure being formed in the substrate material and having a pressure that is lower than an ambient atmospheric pressure.

Apparatus having a cavity structure and method for producing same

A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack over a first main surface of a substrate, forming a polymer layer over a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

MEMS device and method of manufacturing a MEMS device

A method for producing an infrared emitter arrangement is provided. The method includes providing a carrier. The carrier includes at least one infrared emitter structure at a first side of the carrier and at least one cutout at a second side of the carrier, said second side being situated opposite the first side of the carrier, wherein the at least one cutout extends from the second side of the carrier in the direction of the at least one infrared emitter structure. The method further includes securing an infrared filter layer structure at the second side of the carrier in such a way that the at least one cutout separates the at least one infrared emitter structure from the infrared filter layer structure.

Infrared emitter arrangement and method for producing an infrared emitter arrangement

System and method for a transducer in an eWLB package

The present disclosure relates to an apparatus having a substrate arrangement with a first circuit arrangement that heats up during operation and a second circuit arrangement that is integrated into a substrate material of the substrate arrangement. Further, the apparatus has a cavity structure that is arranged between the first and the second circuit arrangement, said cavity structure being formed in the substrate material and having a pressure that is lower than an ambient atmospheric pressure. The present disclosure further relates to a method for producing such an apparatus ().

Growing community of inventors

Ergoldsbach, Germany

Stephan Pindl