Nxp Usa, Inc.

Motorola Corporation

Freescale Semiconductor,inc.

Stephan Ollitrault

Olivier Tico

Hongwei Liu

John M Pigott

Philippe Lance

Yean Ling Teo

Damon Peter Broderick

Savino Luigi Lupo

Arlette Marty-Blavier

A switch comprising: a channel path comprising first and second MOS transistors with common source and gate terminals and drain terminals defining first and second terminals of the channel path; and control circuitry comprising: a third MOS transistor comprising: a gate coupled to the common source terminal; a source coupled to the common gate terminal by a resistor; and a drain coupled to a first reference terminal; a first current source coupled between the first reference terminal and the common gate terminal for providing a first current; a second current source coupled between the source terminal of the third MOS transistor and a second reference terminal for providing a second current greater than the first current; and a first switching arrangement configured to selectively enable and disable the first current source; and a second switching arrangement configured to selectively couple the common source terminal to the second reference terminal.

Switch

An apparatus for determining the occurrence of a leakage current between a series connected electrochemical battery cells, comprising:

Leakage current determination

A system comprises a voltage regulator operably coupled to an external component, a voltage regulator reset circuit and at least one functional element supplied with a voltage by the voltage regulator. The voltage regulator reset circuit is arranged to repetitively reset the voltage regulator upon disconnection of the external component.

Regulated voltage system and method of protection therefor

An input circuit (20) and a method for protecting the input circuit (20) from positive and negative overvoltages. The input circuit (20) includes an N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) (12), a P-channel MOSFET (13), a Zener diode (21), and a diode-connected transistor (22). The P-channel MOSFET (13) protects the N-channel MOSFET (12) from negative overvoltages. The Zener diode (21) and the diode-connected transistor (22) protect the N-channel MOSFET (12) from positive overvoltages. In addition, the Zener diode (21) protects the P-channel MOSFET (13) from positive overvoltages.

Input circuit and method for protecting the input circuit

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Seysses, France

Stephan Ollitrault