Carl Zeiss Smt Gmbh

Asml Netherlands B.v.

Carl-zeiss-smt Ag

Stephan Muellender

Hartmut Enkisch

Hans-Juergen Mann

Dirk Heinrich Ehm

Johannes Hubertus Josephina Moors

Bastiaan Theodoor Wolschrijn

Johann Trenkler

Damian Fiolka

Michael Totzeck

Martin Endres

Thomas Stein

Gisela Von Blanckenhagen

Dieter Kraus

Marcus Gerhardus Hendrikus Meijerink

Richard Versluis

Wilhelm Ulrich

Aurelian Dodoc

Norbert Wabra

Rolf Freimann

Boris Bittner

Christoph Zaczek

Markus Weiss

Olaf Conradi

Wilfried Clauss

Hans-Jochen Paul

Fokko Pieter Wieringa

Hermann Bieg

Martin Von Hodenberg

Peter Huber

Marco Wedowski

Michiel David Nijkerk

Sascha Migura

Hubert Adriaan Van Mierlo

Joern Weber

Gerhard Braun

Gisela Sipos

Roland Loercher

Nadyeh Shariloo, Legal Representative

Wilheim Ulrich

Harmut Enkisch

In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an EUV lithography device, there is proposed for the extreme ultraviolet and soft X-ray wavelength region a reflective optical element () having a reflective surface () with a multilayer system () and in the case of which the reflective surface () has a protective layer system () with an uppermost layer () composed of silicon carbide or ruthenium, the protective layer system () having a thickness of between 5 nm and 25 nm.

Reflective optical element and optical system for EUV lithography

An illumination optical unit for microlithography illuminates an object field with illumination light. The unit includes a first facet mirror that has a plurality of first facets, and a second facet mirror that has a plurality of second facets. The unit has facet pairs which include respectively a facet of the first facet mirror and a facet of the second facet mirror which predefine a plurality of illumination channels for illuminating the object field. At least some of the illumination channels have in each case an assigned polarization element for predefining an individual polarization state of the illumination light guided in the respective illumination channel.

Microlithography illumination system and microlithography illumination optical unit

The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane. The projection objective has at least one mirror segment arrangement comprising a plurality of separate mirror segments. Associated with the mirror segments of the same mirror segment arrangement are partial beam paths which are different from each other and which respectively provide for imaging of the object plane (OP) into the image plane (IP). The partial beam paths are superposed in the image plane (IP). At least two partial beams which are superposed in the same point in the image plane (IP) were reflected by different mirror segments of the same mirror segment arrangement.

Projection objective of a microlithographic projection exposure apparatus

A reflective optical element of an optical system for EUV lithography and an associated manufacturing method. The reflective optical element () includes a multilayer system () for reflecting an incident electromagnetic wave having an operating wavelength in the EUV range, the reflected wave having a phase &#x3c6;, and a capping layer () made from a capping layer material. The method includes determining a dependency according to which the phase of the reflected wave varies with the thickness d of the capping layer, determining a linearity-region in the dependency in which the phase of the reflected wave varies substantially linearly with the thickness of the capping layer, and creating a thickness profile in the capping layer such that both the maximum thickness and the minimum thickness in the thickness profile are in the linearity-region.

Reflective optical element for EUV lithography and method of manufacturing a reflective optical element

A mirror (') for the EUV wavelength range and having a substrate (S) and a layer arrangement, wherein the layer arrangement includes at least one surface layer system (P&#x2032;&#x2033;) consisting of a periodic sequence of at least two periods (P) of individual layers, wherein the periods (P) include two individual layers composed of different materials for a high refractive index layer (H&#x2032;&#x2033;) and a low refractive index layer (L&#x2032;&#x2033;), wherein the layer arrangement includes at least one surface protecting layer (SPL, L) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, and preferably greater than 50 nm.

Mirror for the EUV wavelength range, substrate for such a mirror, projection objective for microlithography comprising such a mirror or such a substrate, and projection exposure apparatus for microlithography comprising such a projection objective

A deflection mirror (, etc.) for a microlithography projection exposure apparatus for illuminating an object field in an object plane of the projection exposure apparatus () using the deflection mirror with grazing incidence. This deflection mirror has a substrate (, etc.) and at least one layer system (, etc.), and during operation light impinges on said mirror at a multiplicity of angles of incidence, wherein the layer system is designed such that, for light having a wavelength of less than 30 nm, for an angle of incidence of between 55&#xb0; and 70&#xb0;, the variation of the reflectivity is less than 20%, in particular less than 12%.

Deflection mirror and projection exposure apparatus for microlithography comprising such a deflection mirror

An imaging optical system has a plurality of mirrors. These image an object field in an object plane into an image field in an image plane. In the imaging optical system, the ratio of a maximum angle of incidence of imaging light) on reflection surfaces of the mirrors and an image-side numerical aperture of the imaging optical system is less than 33.8&#xb0;. This can result in an imaging optical system which offers good conditions for a reflective coating of the mirror, with which a low reflection loss can be achieved for imaging light when passing through the imaging optical system, in particular even at wavelengths in the EUV range of less than 10 nm.

Imaging optical system and projection exposure system including the same

A method of manufacturing a projection objective () of a microlithographic projection exposure apparatus (). The projection objective () comprises at least one mirror (Mto M) that each have a mirror support (to) and a reflective coating () applied thereon. First imaging aberrations of a pre-assembled projection objective are measured. Before the coating () is applied, the mirror supports (to) are provided with a desired surface deformation (). If the mirrors (Mto M) are not reflective for projection light without the coating (), measuring light is used that has another wavelength. Alternatively, two identical mirror supports () may be provided. One support having a reflective coating is part of the pre-assembled projection objective whose imaging aberrations are measured. The other support is provided with surface deformations before coating and mounting the support into the objective.

Projection objective and method for its manufacture

An optical arrangement, e.g. a projection exposure apparatus () for EUV lithography, includes: a housing () enclosing an interior space (); at least one, preferably reflective optical element (--) arranged in the housing (); at least one vacuum generating unit () for the interior space () of the housing (); and at least one vacuum housing (-) arranged in the interior space () and enclosing at least the optical surface () of the optical element (--). A contamination reduction unit is associated with the vacuum housing (-) and reduces the partial pressure of contaminating substances, in particular of water and/or hydrocarbons, at least in close proximity to the optical surface () in relation to the partial pressure of the contaminating substances in the interior space ().

Optical arrangement, in particular projection exposure apparatus for EUV lithography, as well as reflective optical element with reduced contamination

A method for producing a multilayer coating () for reflecting radiation in the soft X-ray or EUV wavelength range on an optical element () operated at an operating temperature (T) of 30&#xb0; C. or more, including: determining an optical design for the multilayer coating () which defines an optical desired layer thickness (nd) of the layers () of the multilayer coating () at the operating temperature (T), and applying the layers () of the multilayer coating () with an optical actual layer thickness (nd) chosen such that a layer thickness change(nd&#x2212;nd) caused by thermal expansion of the layers () between the coating temperature (T) and the operating temperature (T) is compensated for. Also provided are an associated optical element () and a projection exposure apparatus having at least one such optical element ().

Method for producing a multilayer coating, optical element and optical arrangement

An optical element, especially a normal-incidence collector mirror, for radiation in the EUV and/or soft X-ray region of wavelengths is described. The element has a substrate, a multilayer coating with an optically active region, and a capacitor, having a first and a second capacitor electrode. At least one layer of the multilayer coating serves as the first capacitor electrode. At least one dielectric layer is provided between the two capacitor electrodes. Also described is an optical system with at least one optical element, having a first electrode arranged in the vicinity of the optical element.

Optical element for radiation in the EUV and/or soft X-ray region and an optical system with at least one optical element

An optical system for radiation in the EUV wavelength range, in particular a projection exposure apparatus, having at least one vacuum vessel, including: at least one EUV-reflective optical element arranged in an optical path, and a holder which includes at least one sample element, the sample element having an optical surface which is exposed to incident EUV-radiation outside of the optical path, the sample element being sensitive to chemical alterations under influence of the incident EUV-radiation which also affect the optical element. The optical system further includes at least one detection unit for online detection of the contamination status of the sample element during exposure of the sample element to the incident EUV-radiation.

Optical system for radiation in the EUV-wavelength range and method for measuring a contamination status of EUV-reflective elements

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Aalen, Germany

Stephan Muellender