Infineon Technologies Ag

Avago Technologies Wireless IP (singapore) Pte. Ltd.

Epcos Ag

Qualcomm Incorporated

Siemens Aktiengesellschaft

Snaptrack Incorporated

Avago Technologies Wireless Ip, Pte. Ltd.

Contria San Limited Liability Company

Stephan Marksteiner

Robert Aigner

Winfried Nessler

Lueder Elbrecht

Hans-Joerg Timme

Gernot G Fattinger

Martin Handtmann

Robert Thalhammer

Paul-Werner Von Basse

Andreas Link

Lüder Elbrecht

Josef Willer

Thomas Scheiter

Jyrki Kaitila

Juha Ellae

Hans-Jörg Timme

Annette S&auml;nger

Thomas Rainer Herzog

Elbrecht Lueder

L&uuml;der Elbrecht

A topographical structure includes a carrier layer (TS); at least one metal layer (M) applied on the carrier layer; a marginal topology edge at the metal layer; and a structured cover (AB) at the topology edge.

Topographical structure and method of producing it

A temperature-compensated BAW resonator is disclosed. In an embodiment, the BAW includes a substrate and a layer stack disposed thereon, the layer stack including a bottom electrode layer, a top electrode layer, a piezoelectric layer arranged between the bottom and top electrode layers and an acoustic mirror arranged between the bottom electrode layer and the substrate, wherein the acoustic mirror comprises at least two mirror layers, wherein the acoustic mirror comprises high impedance and low impedance layers arranged in an alternating sequence. The layer stack further includes a compensation layer including a material having a positive temperature coefficient of viscoelastic properties, wherein the compensation layer is arranged between the acoustic mirror and the bottom electrode layer, wherein the mirror layers together form a Bragg mirror.

BAW resonator having temperature compensation

A reactance filter includes a series branch that connects a signal input to a signal output. At least one parallel branch branches off from the series branch with respect to ground. A parallel resonator is arranged in each parallel branch. Two or more series resonators are connected in series in the series branch. A capacitor is connected in parallel with one of the series resonators in the series branch.

Reactance filter having a steep edge

An antenna matching circuit includes at least two signal paths are connected to one antenna connection. The signal paths are designed to transmit and/or receive RF signals. A matching circuit includes a discrete line for phase shifting integrated at the antenna end in at least one of the signal paths. In this case, at least one of the capacitances contained in the discrete line is in the form of a micro-acoustic resonator, whose resonance is shifted sufficiently far that it is outside the pass band of the respective signal paths.

Antenna matching circuit

In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.

Piezoelectric oscillating circuit, method for manufacturing the same and filter arrangement

A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion.

Method of manufacturing an acoustic mirror for a piezoelectric resonator

Method of manufacturing an acoustic mirror for piezoelectric resonator

In a method of producing an electrode for a resonator in thin-film technology, the electrode of the resonator is embedded in an insulating layer such that a surface of the electrode is exposed, and that a surface defined by the electrode and the insulating layer is substantially planar.

Method of producing a topology-optimized electrode for a resonator in thin-film technology

A piezoelectric component comprises at least two stacked crystal filters on a substrate. Each stacked crystal filter comprises a bottom electrode, a first piezoelectric layer arranged above the bottom electrode, a central electrode arranged above the first piezoelectric layer, a second piezoelectric layer arranged above the central electrode, and a top electrode arranged above the second piezoelectric layer. The bottom electrodes are directly connected to one another and the central electrodes are directly connected to one another.

Piezoelectric component and method for producing it

A bulk acoustic wave (BAW) filter () is fabricated from thin film bulk acoustic wave resonators and a method eliminates unwanted side passbands. This BAW filter comprises a substrate () a resonator section () and an acoustic mirror section (). Further it comprises a detuning component () positioned in the resonator section () to provide precise passband characteristics and an additional detuning component () in the acoustic mirror section () to suppress unwanted side-passband characteristics.

Bulk acoustic wave filter and method for eliminating unwanted side passbands

A method for producing a piezoelectric component comprising at least two stacked crystal filters comprises the steps of depositing of the layer stack above the bottom electrode and the subsequent patterning of the upper electrically conductive layer and, if appropriate, second piezoelectric layers. Thus, it is possible, in a simple manner, with a minimum of process steps, to produce a piezoelectric component comprising two stacked crystal filters which are directly connected to one another via their bottom and central electrodes. The piezoelectric component furthermore has the advantage that applications in which a high stop band attenuation is important can be realized with a relatively small number of filter stages. In this case, through the use of at least two stacked crystal filters, it is possible to achieve an excellent out-of-band rejection also for 'single-ended signals'.

Method of producing a piezoelectric component

A circuit and method are provided for ensuring that a fingerprint sensor is started automatically when a finger is rested thereon such that a sufficiently contrasting image can be produced. A difference between a maximum and a minimum value of the sensor signals is generated wherein, if the difference is sufficiently large, indicating a sufficient contrast of an image to be produced, a normal scanning operation of the fingerprint sensor is initiated, thus ensuring that the complete fingerprint image is produced, a normal scanning operation of the fingerprint sensor is initiated, thus ensuring that the complete fingerprint images produced are of satisfactory quality.

Circuit arrangement and method for operating a fingerprint sensor

A BAW resonator includes a resonator region having a piezo-electric layer between two excitation electrodes, wherein an acoustic standing wave forms when operating the BAW resonator at a resonant frequency. Furthermore, the BAW resonator includes a leaky wave reflection structure formed to reflect leaky waves generated when operating the BAW resonator, wherein the leaky waves propagate in a direction differing from a propagation direction of the acoustic standing wave.

BAW resonator

A filter circuit comprises a balanced port, an unbalanced port and a substrate. A series circuit of a filter stage and a balun is disposed between the balanced port and the unbalanced port. The balun and the filter stage are formed on the substrate.

Growing community of inventors

Putzbrunn, Germany

Stephan Marksteiner