Osram Opto Semiconductors Gmbh

Facebook Technologies, LLC

Meta Platforms Technologies, LLC

Azur Space Solar Power Gmbh

Osram Gmbh

Philipps-Universität Marburg

Stephan Lutgen

Thomas Lauermann

David Massoubre

Saad Murad

Tony Albrecht

Peter Brick

David Hwang

Andrew John Ouderkirk

Lu Lu

Scott Charles McEldowney

Pasi Saarikko

Giuseppe Calafiore

Wanli Chi

Babak Amirsolaimani

Wai Sze Tiffany Lam

Hee Yoon Lee

Barry David Silverstein

Andrew Maimone

Maxwell Parsons

Gang Li

Ningfeng Huang

Alexander Koshelev

Ashay Chitnis

Christoph Eichler

Uwe Strauss

Norbert Linder

Matthias Sabathil

Wolfgang Schmid

Adrian Stefan Avramescu

Ulrich Steegmüller

Désirée Queren

Johann Luft

Wolfgang Reill

Markus Broell

Marc Schillgalies

Michael Grundmann

Francois Olivier

Francois Gerard Franck Olivier

Thomas Schwarz

Stefan Groetsch

William Padraic Henry

Franz Eberhard

Daniel Bryce Thompson

Christophe Antoine Hurni

Anurag Tyagi

Werner Späth

Wolfgang Stolz

Berthold Hahn

Christian Karnutsch

Guillaume Lheureux

Michael Kuehnelt

Wolfgang Diehl

Vasily Zabelin

François Gérard Franck Olivier

Brian Matthew Mcskimming

A light source includes an epitaxial layer stack that includes an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer. The epitaxial layer stack includes a two-dimensional (2-D) array of mesa structures formed therein. The light source further includes an array of p-contacts electrically coupled to the p-type semiconductor layer of the 2-D array of mesa structures, a metal layer in regions surrounding individual mesa structures of the 2-D array of mesa structures, and a plurality of n-contacts coupling the metal layer to the n-type semiconductor layer at a plurality of locations between the individual mesa structures of the 2-D array of mesa structures.

Low resistance current spreading to n-contacts of micro-LED array

Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method of forming an LED involves forming a semiconductor structure on a substrate. The semiconductor structure includes a p-side semiconductor layer, an n-side semiconductor layer, and an active light emitting layer between the p-side semiconductor layer and the n-side semiconductor layer. The semiconductor structure is also formed to include a light outcoupling surface facing the substrate. The light outcoupling surface has a diameter less than twice an electron diffusion length of a material of the semiconductor structure. The method further involves implanting ions in an outer region of the semiconductor structure, then annealing the outer region after the ions have been implanted. The annealing causes the ions to intermix with atoms within the outer region, thereby increasing a bandgap of the outer region.

Reduction of surface recombination losses in micro-LEDs

Disclosed herein are techniques for bonding LED components. According to certain embodiments, a first component is bonded to a second component using dielectric bonding and metal bonding. The first component includes an active light emitting layer between oppositely doped semiconductor layers. The second component includes a substrate having a different thermal expansion coefficient than the first component. First contacts of the first component are aligned to second contacts of the second component. A dielectric material of the first component is then bonded to a dielectric material of the second component. The metal bonding is performed between the first contacts and the second contacts, after the dielectric bonding, and using annealing. The bonded structure has a concave or convex shape before the metal bonding. Run-out between the first contacts and the second contacts is compensated through temperature-induced changes in a curvature of the bonded structure during the metal bonding.

Bonding methods for light emitting diodes

A waveguide assembly is provided. The waveguide assembly includes a pair of pupil-replicating waveguides. The first pupil-replicating waveguide is configured for receiving an input beam of image light and providing an intermediate beam comprising multiple offset portions of the input beam. The second pupil-replicating waveguide is configured for receiving the intermediate beam from the first pupil-replicating waveguide and providing an output beam comprising multiple offset portions of the intermediate beam. The input beam may be expanded by the waveguide assembly in such a manner that pupil gaps are reduced or eliminated.

Cascaded pupil-replicating waveguides

Disclosed herein are methods, systems, and apparatuses for an light emitting diode (LED) array apparatus. In some embodiments, the LED array apparatus may include a plurality of mesas etched from a layered epitaxial structure. The layered epitaxial structure may include a P-type doped semiconductor layer, a active layer, and an N-type doped semiconductor layer. The LED array apparatus may also include one or more regrowth semiconductor layers, including a first regrowth semiconductor layer, which may be grown epitaxially over etched facets of the plurality of mesas. In some cases, for each mesa, the first regrowth semiconductor layer may overlay etched facets of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer, around an entire perimeter of the mesa.

Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes

Disclosed herein are techniques for bonding LED components. According to certain embodiments, a first component including a semiconductor layer stack is hybrid bonded to a second component including a substrate that has a different thermal expansion coefficient than the semiconductor layer stack. The semiconductor layer stack includes an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The first component and the second component further include first contacts and second contacts, respectively. To hybrid bond the two components, the first contacts are aligned with the second contacts. Then dielectric bonding is performed to bond respective dielectric materials of both components. The dielectric bonding is followed by metal bonding of the contacts, using annealing. To compensate run-out between the first contacts and the second contacts, aspects of the present disclosure relate to changing a curvature of the first component and/or the second component during the annealing stage.

Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter that is less than twice an electron diffusion length of the semiconductor layer. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a device includes a first component and a second component. The first component includes a semiconductor layer stack having an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The semiconductor layer stack includes a III-V semiconductor material. The second component includes a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component. First contacts of the first component are aligned with and bonded to second contacts of the second component. The first contacts of the first component form a first pattern within the first dielectric material of the first component, and the second contacts of the second component form a second pattern within the second dielectric material of the second component.

Hybrid-bonded and run-out compensated light emitting diodes

Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a method includes performing p-side processing of a first component. The p-side processing is performed from a direction adjacent to a surface of a p-side semiconductor layer of the first component that is opposite to an active light emitting layer of the first component. The method also includes aligning first contacts of the first component with second contacts of the second component, and subsequently performing hybrid bonding of the first component to the second component by performing dielectric bonding of a first dielectric material of the first component with a second dielectric material of the second component at a first temperature, and subsequently performing metal bonding of the first contacts of the first component with the second contacts of the second component by annealing the first contacts and the second contacts at a second temperature.

Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a device includes a first component having a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. A plurality of mesa shapes are formed within the n-side semiconductor layer, the active light emitting layer, and the p-side semiconductor layer. The semiconductor layer stack comprises a III-V semiconductor material. The device also includes a second component having a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component, first contacts of the first component are aligned with and bonded to second contacts of the second component, and a run-out between the first contacts and the second contacts is less than 200 nm.

A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

Micron-sized light emitting diode designs

Techniques disclosed herein relate to micro light emitting diodes (micro-LEDs) for a display system. A display system includes an array of micro light emitting diodes (micro-LEDs), an array of output couplers optically coupled to the array of micro-LEDs and configured to extract light emitted by respective micro-LEDs in the array of micro-LEDs, a waveguide display, and display optics configured to couple the light emitted by the array of micro-LEDs and extracted by the array of output couplers into the waveguide display. Each output coupler in the array of output couplers is configured to direct a chief ray of the light emitted by a respective micro-LED in the array of micro-LEDs to a different respective direction.

Micro-LED design for chief ray walk-off compensation

Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a micro-LED includes a first component having a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The semiconductor layer stack includes a III-V semiconductor material. The micro-LED also includes a second component having a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component, first contacts of the first component are aligned with and bonded to second contacts of the second component, a surface recombination velocity (SRV) of the micro-LED is less than or equal to 3E4 cm/s, and an e-h diffusion of the micro-LED is less than or equal to 20 cm/s.

Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter of less than 10 &#x3bc;m. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

Growing community of inventors

Dresden, Germany

Stephan Lutgen