Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Osram Oled Gmbh

Stephan Kaiser

Berthold Hahn

Volker Härle

Michael Fehrer

Andreas Ploessl

Dominik Eisert

Julius Muschaweck

Stefan Bader

Ales Markytan

Peter Brick

Gerhard Kuhn

Andreas Plössl

Wilhelm Stein

Christian Neugirg

Frank Otte

Johannes Baur

Franz Eberhard

Thomas Schlereth

Albert Schneider

Joachim Frank

Matthias Winter

Thorsten Kunz

Tony Albrecht

Alexander Linkov

Jan Marfeld

Uli Hiller

Christian Gaertner

Christian Gärtner

Markus Kirsch

Michael Bestele

Andreas Pl&ouml;ssl

An optoelectronic component, comprising: a structured semiconductor layer, a metallic mirror layer arranged on the semiconductor layer, a diffusion barrier layer arranged on the metallic mirror layer, a passivation layer arranged on the diffusion barrier layer, wherein the semiconductor layer comprises a mesa structure with mesa trenches. The mesa trenches taper from the surface of the semiconductor layer towards the mirror layer.

Optoelectronic component and method for the production thereof

A method of producing an optoelectronic component, comprising the method steps: A) providing a growth substrate (); B) growing at least one semiconductor layer () epitaxially, to produce an operationally active zone; C) applying a metallic mirror layer () to the semiconductor layer (); D) applying at least one contact layer () for electronic contacting of the component; E) detaching the growth substrate () from the semiconductor layer (), so exposing a surface of the semiconductor layer (); and F) structuring the semiconductor layer () by means of an etching method from the side of the surface which was exposed in method step E).

An optoelectronic component device includes a plurality of optoelectronic components that provide and/or absorb electromagnetic radiation; a reflector arranged in a beam path of the electromagnetic radiation of the plurality of optoelectronic components and which has a surface that is at least partly reflective with respect to the provided electromagnetic radiation; wherein the plurality of optoelectronic components at least partly surround the reflector or are at least partly surrounded by the reflector; and the reflector reflects a provided electromagnetic radiation such that a predefined field distribution of the reflected electromagnetic radiation is formed in the image plane of the optoelectronic component device.

Optoelectronic component device, method of producing an optoelectronic component device, and method of operating an optoelectronic component device, method of operating an optoelectronic device having improved emission characteristics

A surface light guide includes a radiation exit area running along a main extension plane of the surface light guide and includes a light guiding region, which has scattering locations and a coating arranged on a first main area of the light guiding region, wherein radiation coupled in along the main extension plane impinging on the first main area after scattering at the scattering locations has an excessively increased radiation component and the coating reduces in a targeted manner an exit of the excessively increased radiation component from the radiation exit area.

Surface light guide and planar emitter

An optoelectronic semiconductor device includes at least one radiation-emitting and/or radiation-receiving semiconductor chip including a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface includes a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures, a reflective sheath surrounding the at least one semiconductor chip at least in sections, and a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections.

Optoelectronic semiconductor device with protective and reflective sheaths

An optoelectronic semiconductor chip () is specified, comprising a semiconductor layer sequence () having at least two active regions () arranged one above another, wherein the active regions () each have a first semiconductor region () of a first conduction type, a second semiconductor region () of a second conduction type and a radiation-emitting active layer () arranged between the first semiconductor region () and the second semiconductor region (). The optoelectronic semiconductor chip () comprises a mirror layer (), which is arranged at a side of the semiconductor layer sequence () facing away from a radiation exit surface (), and at least two electrical contacts () which are arranged at a side of the mirror layer () facing away from the radiation exit surface (). Furthermore, a light source () comprising the optoelectronic semiconductor chip () is specified.

Optoelectronic semiconductor chip, and light source comprising the optoelectronic semiconductor chip

An optoelectronic semiconductor device includes a first light source that emits green, white or white-green light and includes a semiconductor chip that emits in the blue spectral range, and a first conversion element attached directly to the semiconductor chip, a second light source that emits red light, having a semiconductor chip, that emits in a blue spectral range, and having a second conversion element attached directly to the semiconductor chip, and/or having a semiconductor chip that emits in a red spectral range, a third light source that emits blue light and has a semiconductor chip emitting in the blue spectral range, and a filler body having a matrix material into which a conversion agent is embedded, wherein the filler body is disposed downstream of the light sources collectively.

Optoelectronic semiconductor device

A luminescence diode arrangement includes a first luminescence diode chip, a second luminescence diode chip and a luminescence conversion element, wherein the first luminescence diode chip emits blue light, the second luminescence diode chip contains a semiconductor layer sequence that emits greens light, the luminescence conversion element converts part of the blue light emitted by the first luminescence diode chip into red light, and the luminescence diode arrangement emits mixed light containing blue light of the first luminescence diode chip, green light of the second luminescence diode chip and red light of the luminescence conversion element.

Luminescence diode arrangement, backlighting device and display device

The invention relates to a surface light source with a lighting surface that includes at least one semiconductor body that emits electromagnetic radiation from its front side during operation. Decoupling structures are suitable for producing a local variation of the light density on the lighting surface, so that the light density is increased in at least one illumination area with respect to a background area.

Surface light source

A surface light guide has a radiation exit area extending along a main extension plane of the surface light guide and is provided for laterally coupling radiation. The surface light guide includes scattering locations for scattering the coupled radiation. The surface light guide includes a first boundary surface and a second boundary surface which delimit the light conductance of the coupled-in radiation in the vertical direction. A first layer and a second layer are formed on each other in the vertical direction between the first boundary surface and the second boundary surface. Further disclosed are a planar emitter including at least one surface light guide.

A light emitting device including a light emitting diode having a semiconductor body that generates electromagnetic radiation; a converter element downstream of the first light emitting diode which converts at least part of the electromagnetic radiation into first color light; a second light emitting diode having a semiconductor body that generates light of the first color; a radiation exit area from which the first color light emerges; and a drive circuit operating the second light emitting diode, wherein the converter element contains at least one luminescence conversion material that emits the first color light, as the operating duration of the first light emitting diode increases, intensity of the first color light emitted by the converter element decreases, the drive circuit controls the second light emitting diode dependent on at least one of measurement values: intensity of the first color light emitted by the converter element, temperature of the converter element, operating duration of the first light emitting diode, and color locus of the light emerging from the radiation exit area.

Light emitting device

For semiconductor chips using thin film technology, an active layer sequence is applied to a growth substrate, on which a reflective electrically conductive contact material layer is then formed. The active layer sequence is patterned to form active layer stacks, and reflective electrically conductive contact material layer is patterned to be located on each active layer stack. Then, a flexible, electrically conductive foil is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.

Method for producing semiconductor chips using thin film technology

Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.

Method for producing a semiconductor element

Method for producing a semiconductor component

A method for producing a semiconductor component, in which a semiconductor layer is separated from a substrate by irradiation with laser pulses, the pulse duration of the laser pulses being less than or equal to 10 ns. The laser pulses have a spatial beam profile with a flank slope is chosen to be gentle enough to prevent cracks in the semiconductor layer that arise as a result of thermally induced lateral stresses during the separation of semiconductor layer and substrate.

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Wuppertal, Germany

Stephan Kaiser