Nxp B.v.

Dsp Group Switzerland Ag

Stephan Jo Cecile Henri Theeuwen

Petra Christina Anna Hammes

Radjindrepersad Gajadharsing

Thomas Christian Roedle

Hendrikus Ferdinand Franciscus Jos

Freerk Van Rijs

Johannes Adrianus Maria De Boet

Henk Jan Peuscher

Paul Bron

Ivo Bernhard Pouwel

It is disclosed a semiconductor transistor, comprising a semiconductor substrate () in which a channel region () and a drain extension region () connected to the channel region are provided; a gate electrode () configured to provide an electric field for influencing the channel region; a first electrically conductive shield element () extending in a horizontal direction () parallel to a main surface of the semiconductor substrate and being arranged beside the gate electrode spaced apart from the drain extension region in a vertical direction () perpendicular to the horizontal direction; and a second electrically conductive shield element () arranged spaced apart from the first shield element in the vertical direction, wherein the gate electrode protrudes over the first shield element in the vertical direction.

Semiconductor transistor comprising two electrically conductive shield elements

Laterally diffused metal oxide semiconductor transistor for a radio frequency-power: amplifier comprising a drain finger () which drain finger is connected to a stack of one or more metal interconnect layers, () wherein a metal interconnect layer () of said stack is connected to a drain region () on the substrate, wherein said stack comprises a field plate () adapted to reduce the maximum magnitude of the electric field between the drain and the substrate and overlying the tip of said drain finger.

LDMOS having a field plate

An electronic device comprising a field-effect transistor having an inter digitated structure suitable for high-frequency power applications, and having multiple threshold voltages that are provided in different regions of each a segment of the interdigitated structure. This leads to a dramatic improvement in linearity over a large power range in the back-off region under class AB signal operation.

Electronic device comprising a field effect transistor for high-frequency applications

The invention relates to in particular a lateral DMOST with a drain extension (). In the known transistor a further metal strip () is positioned between the gate electrode contact strip and the drain contact () which is electrically connected with the source region contact (). In the device proposed here, the connection between the further metal strip () and the source contact () comprises a capacitor () and the further metal strip () is provided with a further contact region () for delivering a voltage to the further metal strip (). In this way an improved linearity is possible and the usefulness of the device is improved in particular at high power and at high frequencies. Preferably the capacitor () is integrated with the transistor in a single semiconductor body (). The invention further comprises a method of operating a device () according to the invention.

Semiconductor transistor (DMOS) device for use as a power amplifier

The LDMOS transistor () of the invention is provided with a stepped shield structure () and/or with a first () and a second () drain extension region having a higher dopant concentration than the second drain extension region, and being covered by the shield.

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Nijmegen, Netherlands

Stephan Jo Cecile Henri Theeuwen