The Penn State Research Foundation

Stephan J Fonash

Sanghoon Bae

The method of the invention induces crystallization in an amorphous semiconductor layer, and includes the steps of: a) producing a patterned metal layer on a first substrate, the metal layer exhibiting a weak level of adherence to the first substrate; b) pressing the metal layer into physical contact with the amorphous semiconductor layer; c) applying heat, light or both to the metal layer and amorphous semiconductor layer to cause a reaction therebetween and a crystallization of the amorphous semiconductor that is juxtaposed to the metal.

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State College, PA, United States of America

Stephan J Fonash