Infineon Technologies Ag

Stephan Henneck

Ivan Nikitin

Hans-Joerg Timme

Dirk Meinhold

Bernhard Weidgans

Evelyn Napetschnig

Reimund Engl

Norbert Urbansky

Daniel Pedone

Alfred Vater

Norbert Mais

Simon Faiss

A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization layer over a semiconductor workpiece; patterning the first metallization layer; and depositing a second metallization layer over the patterned first metallization layer, wherein depositing the second metallization layer includes an electroless deposition process including immersing the patterned first metallization layer in a metal electrolyte.

Method for processing a semiconductor workpiece and semiconductor workpiece

In one embodiment, a method of forming a semiconductor device includes forming a metal line over a substrate and depositing an alloying material layer over a top surface of the metal line. The method further includes forming a protective layer by combining the alloying material layer with the metal line.

Protection layers for conductive pads and methods of formation thereof

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Wuppertal, Germany

Stephan Henneck