Osram Opto Semiconductors Gmbh

Stephan Haneder

Roland Enzmann

Karsten Auen

Markus Horn

Christoph Walter

Tomasz Swietlik

Andreas Rozynski

Markus Graul

Thomas Dobbertin

Harald König

Mathias Kämpf

Markus Arzberger

Jürgen Dachs

Robin Fehse

In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.

Method for producing a laser diode, mount and laser diode

Laser diode apparatus, comprising a carrier () having a carrier top (), a laser diode chip () arranged on the carrier top () emitting, during operation, electromagnetic radiation through a radiating face (), which radiating face () runs perpendicularly to the carrier top (), and at least one optical element () to deflect at least some of the electromagnetic radiation radiated by the laser diode chip () perpendicularly to the carrier top (). By the use of a plurality of laser diode chips having wavelengths that differ very slightly from one another, speckles can be reduced. By means of a retarder plate () between the laser diode chip and the optical element it is possible to influence the polarization. A polarization cube enables the deflected light beam bundles to fully cover one another as differently polarized light beam bundles.

Laser diode apparatus

A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).

Method of producing a semiconductor laser element, and semiconductor laser element

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Wuppertal, Germany

Stephan Haneder