Infineon Technologies Ag

Infineon Technologies Dresden Gmbh & Co . Kg

Stephan Gerhard Albert

Franz Michael Darrer

Steffen Bieselt

Norbert Druml

Erhard Landgraf

Hendrikus Van Lierop

Georg Schitter

Marcus Edward Hennecke

David Brunner

Han Woong Yoo

Matthias Rose

Richard Schroedter

Sebastian Pregl

Christoph Steiner

Philipp Greiner

Marten Oldsen

Thomas Thurner

Selma Karic

Leonhard Niedermueller

An oscillator control system includes an oscillator structure configured to oscillate about first and second rotation axes according to a Lissajous pattern, wherein an oscillation about the second rotation axis imparts a cross-coupling error onto an oscillation about the first rotation axis, and wherein the cross-coupling error changes in accordance with a Lissajous position within the Lissajous pattern; and a driver circuit that includes a phase-locked loop (PLL) configured to regulate a driving signal that drives the oscillation about the first rotation axis. The PLL is configured to generate a PLL signal based on a phase error of the oscillation about the first rotation axis. The PLL includes a compensation circuit configured to receive the PLL signal and the Lissajous position within the Lissajous pattern, apply a compensation value to the PLL signal to generate a compensated PLL signal used for generating the driving signal based on the Lissajous position.

Detection, correction, and compensation of coupling effects of microelectromechanical system (MEMS) axes of a two-dimensional scanning structure

A method of Lissajous scanning includes driving a first oscillator structure about a first rotation axis at a first resonance frequency according to a first driving signal, and driving a second oscillator structure about a second rotation axis at a second resonance frequency according to second driving signal different from the first resonance frequency. The first driving signal has a first low level, a first high level, and a first duty cycle, the combination of which produces the first resonance frequency, and the second driving signal has a second low level, a second high level, and a second duty cycle, the combination of which produces the second resonance frequency. At least one of the second low level, the second high level, and the second duty cycle is different from the first low level, the first high level, and the first duty cycle, respectively.

Driving signal parameter variation for driving MEMS mirrors for synchronization control and tuning Lissajous scanning

A scanning system includes a microelectromechanical system (MEMS) scanning structure configured with a desired rotational mode of movement based on a driving signal; a plurality of comb-drives configured to drive the MEMS scanning structure according to the desired rotational mode of movement based on the driving signal, each comb-drive including a rotor comb electrode and a stator comb electrode that form a capacitive element that has a capacitance that depends on the deflection angle of the MEMS scanning structure; a driver configured to generate the at least one driving signal; a sensing circuit selectively coupled to at least a subset of the plurality of comb-drives for receiving sensing signals therefrom, wherein each sensing signal is representative of the capacitance of a corresponding comb-drive; and a processing circuit configured to determine a scanning direction of the MEMS scanning structure in the desired rotational mode of movement based on the sensing signals.

Method of mode coupling detection and damping and usage for electrostatic MEMS mirrors

A method for producing a MEMS device comprises fabricating a first semiconductor layer and selectively depositing a second semiconductor layer over the first semiconductor layer, wherein the second semiconductor layer comprises a first part composed of monocrystalline semiconductor material and a second part composed of polycrystalline semiconductor material. The method furthermore comprises structuring at least one of the semiconductor layers, wherein the monocrystalline semiconductor material of the first part and underlying material of the first semiconductor layer form a spring element of the MEMS device and the polycrystalline semiconductor material of the second part and underlying material of the first semiconductor layer form at least one part of a comb drive of the MEMS device.

MEMS devices comprising spring element and comb drive and associated production methods

A method produces a micromechanical sensor element having a first electrode and a second electrode, wherein electrode wall surfaces of the first and the second electrodes are situated opposite one another in a first direction and form a capacitance, wherein one of the first electrode or the second electrode is movable in a second direction, in response to a variable to be detected, and a second one of the first electrode and the second electrode is fixed. The method includes producing a cavity in a semiconductor substrate, the cavity being closed by a doped semiconductor layer; producing the first and the second electrodes in the semiconductor layer, including modifying the electrode wall surface of the first electrode in order to have a smaller extent in the second direction than the electrode wall surface of the second electrode.

Micromechanical sensor and methods for producing a micromechanical sensor and a micromechanical sensor element

A MEMS device includes a body pivoting around a pivot axis, a support, and a suspension structure mechanically coupling the body to the support. The suspension structure includes a torsion element defining the pivot axis, and first and second spring elements extending with an angle relative to the pivot axis on opposing sides of the torsion element so that a distance between at least portions of the first and second spring elements is changing in the direction of the pivot axis. The extension of the first and second spring elements in the direction of the pivot axis is larger than the extension of the torsion element in the direction of the pivot axis.

MEMS device with suspension structure and method of making a MEMS device

A micromechanical sensor includes a first and a second capacitive sensor element each having a first and a second electrode, wherein electrode wall surfaces of the first electrode and the second electrode are situated opposite one another in a first direction and form a capacitance, wherein the first electrodes are movable in a second direction, which is different than the first direction, in response to a variable to be detected, and the second electrodes are stationary. The electrode wall surface of the first electrode of the first sensor element has a smaller extent in the second direction than the opposite electrode wall surface of the second electrode of the first sensor element. The electrode wall surface of the second electrode of the second sensor element has a smaller extent in the second direction than the opposite electrode wall surface of the first electrode of the second sensor element.

A device is provided for detecting and/or regulating an amplitude of an oscillation of an oscillatory body about an oscillation axis, wherein a change in a capacitance between at least one electrode of the oscillatory body and a stationary electrode takes place during the oscillation of the oscillatory body. The device comprises a detection circuit for detecting a signal representing a measure of the change in capacitance; and an evaluation circuit for determining information from the signal, wherein the evaluation circuit is designed to calculate the amplitude of the oscillation of the oscillatory body from the determined information and an ascertained period of the oscillation of the oscillatory body and/or to regulate the amplitude of the oscillation of the oscillatory body using the determined information and the ascertained period of the oscillation of the oscillatory body.

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Munich, Germany

Stephan Gerhard Albert