Infineon Technologies Ag

Qimonda Ag

Merck Patent Gmbh

Az Electronic Materials (luxembourg) S.a.r.l.

Stephan Dertinger

Masayoshi Suzuki

Alfred Martin

Grit Sommer

Barbara Hasler

Florian Binder

Volker Lehmann

Thomas Peter Haneder

Holger Torwesten

Reinhard Marz

Michaela Fritz

Karin Fuchs

Tadashi Ishigaki

Eiji Nishihara

An integrated circuit having a semiconductor substrate with a barrier layer is disclosed. The arrangement includes a semiconductor substrate and a metallic element. A carbon-based barrier layer is disposed between the semiconductor substrate and the metallic element.

Integrated circuit having a semiconductor substrate with barrier layer

A substrate has at least one feedthrough with at least one channel from a first main surface of the substrate to a second main surface of the substrate. The at least one channel is closed off with a first material. The at least one closed-off channel is filled with an electrically conductive second material.

Substrate with feedthrough and method for producing the same

A substrate with first and second main surfaces includes at least one channel extending from the first main surface to the second main surface. The at least one channel includes a first cross-sectional area at a first location and a second cross-sectional area at a second location. An electrically conductive first material is disposed in the at least one channel.

Integrated circuit having a semiconductor substrate with a barrier layer

Device having a flat macroporous support material made of silicon and having surfaces, a plurality of pores each having a diameter in a range of from 500 nm to 100 &#x3bc;m distributed over at least one surface region of the support material and extending from one surface through to the opposite surface of the support material, at least one region having one or more pores with SiO2 pore walls, and a frame of walls with a silicon core surrounding the at least one region and arranged essentially parallel to longitudinal axes of the pores and open towards the surfaces, wherein the silicon core merges into silicon dioxide over a cross section towards an outer side of the walls forming the frame.

Device based on partially oxidized porous silicon and method for its production

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Heidelberg, Germany

Stephan Dertinger