Novaled Gmbh

Novaled Ag

Other

Steffen Willmann

Olaf Zeika

Andrea Lux

Horst Hartmann

Carsten Rothe

Ansgar Werner

Benjamin Schulze

Francois Cardinali

Uwe Gölfert

Sascha Dorok

Ulrich Heggemann

Thomas Rosenow

Jerome Ganier

Vygintas Jankus

Michael Limmert

Steffen Runge

Oliver Langguth

Tomas Kalisz

Ina Steudtner

Rene Dathe

Ina Faltin

Christine Bachmann

Vladimir Uvarov

Piermaria Pinter

Markus Burghart

Jin Park Moo

Jakob Wudarczyk

Jérôme Garnier

Max Nüllen

Prof Dr Horst Hartmann

René Dathe

The present invention relates to oxocarbon-, pseudooxocarbon- and radialene compounds as well as to their use as doping agent for doping an organic semiconductive matrix material, as blocker material, as charge injection layer, as electrode material as well as organic semiconductor, as well as electronic components and organic semiconductive materials using them.

Oxocarbon-, pseudooxocarbon- and radialene compounds and their use

Process for preparing a metal containing layer, the process comprising (i) at least one step of co-vaporization, at a pressure which is lower than 10Pa, of a) at least one first metal selected from Li, Na, K, Rb and Cs and b) at least one second metal selected Mg, Zn, Hg, Cd and Te from a metal alloy provided in a first vaporization source which is heated to a temperature between 100&#xb0; C. and 600&#xb0; C., and (ii) at least one subsequent step of deposition of the first metal on a surface having a temperature which is below the temperature of the first vaporization source, wherein in step (i), the alloy is provided at least partly in form of a homogeneous phase comprising the first metal and the second metal, electronic devices comprising such materials and process for preparing the same.

Process for making a metal containing layer

The present invention relates to a semiconducting material comprising (i) a substantially covalent matrix material consisting of at least one substantially covalent matrix compound, (ii) at least one first metal selected from the group consisting of Li, Na, K, Rb, and Cs, and (iii) at least one second metal selected from the group consisting of Zn, Hg, Cd and Te, electronic devices comprising such materials and processes for preparing the same.

N-doped semiconducting material comprising two metal dopants

The present invention relates to a metallic layer adjacent to a semiconducting layer comprising a substantially covalent matrix material, the metallic layer comprising at least one first metal and at least one second metal, wherein a) the first metal is selected from the group consisting of Li, Na, K, Rb, Cs; and b) the second metal is selected from the group consisting of Zn, Hg, Cd, Te, electronic devices comprising such materials and process for preparing the same.

Metallic layer comprising alkali metal and second metal

The invention relates to quinoid compounds and their use in semiconductive matrix materials, electronic and optoelectronic structural elements.

Quinoid compounds and their use in semiconducting matrix materials, electronic and optoelectronic structural elements

The present invention relates to the use of a square planar transition metal complex as dopant, charge injection layer, electrode material or storage material.

Use of square planar transition metal complexes as dopant

The invention relates to aryl- and/or heteroaryl-substituted main group element halides and/or pseudohalides, the use of main group element halides and/or pseudohalides as dopant for the doping of an organic semiconducting matrix material, as charge injection layer, as hole blocker layer, as electrode material, as transport material itself, as memory material in electronic or optoelectronic structural elements.

Aryl-substituted and/or heteroaryl-substituted main group element halides and/or pseudohalides, use of main group element halides and/or pseudohalides, organic semiconducting matrix material, electronic and optoelectronic components

The present invention relates to square planar transition metal complexes and their use in organic semiconductive materials as well as in electronic or optoelectronic components.

Square planar transition metal complexes and organic semiconductive materials using them as well as electronic or optoelectric components

The present invention relates to radialene compounds as well as to their use as doping agent for doping an organic semiconductive matrix material, as blocker material, as charge injection layer, as electrode material as well as organic semiconductor, as well as electronic components and organic semiconductive materials using them.

Radialene compounds and their use

Growing community of inventors

Dresden, Germany

Steffen Willmann