Novaled Gmbh

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Steffen Runge

Carsten Rothe

Jan Birnstock

Ansgar Werner

Benjamin Schulze

Johannes Scholz

Elena Galán García

Felix Limberg

Omrane Fadhel

Sascha Dorok

Markus Hummert

Steffen Willmann

Quan Chen

Volodymyr Senkovskyy

Jan Blochwitz-Nimoth

Julien Frey

Ulrich Heggemann

Domagoj Pavicic

Thomas Rosenow

Jerome Ganier

Regina Luschtinetz

Tobias Canzler

Gregor Schwartz

Sven Murano

Kay Lederer

Jens Wutke

Oliver Langguth

Uwe Gölfert

Rudolf Lessmann

Hartmut Krüger

Elena GALÁN GARCÍA

Ina Steudtner

Manuela Klose

Anke Limbach

Michele Sessolo

Jorge Avila

Maria Grazia La Placa

Pablo B Boix

Hendrik Bolink

Hartmut Krueger

Chao Wu

Vladimir Uvarov

Jens Angermann

Michael Hofmann

Piermaria Pinter

Jakob Wudarczyk

Anke Teichler

Max Nüllen

François Cardinali

The present invention relates to a compound of formula (I); an organic semiconducting layer, an organic electronic device, a display device or a lighting device comprising the same.

Compound and an organic semiconducting layer, an organic electronic device and a display or lighting device comprising the same

The present invention relates to a display device comprising a common charge generation layer and method for making the same.

Display device comprising a common charge generation layer and method for making the same

The present invention relates to a compound having the formula (I); and an organic semiconducting layer, an organic electronic device, a display device and a lighting device comprising the same.

The present invention is related to a solar cell comprising a first electrode; a second electrode; and a stack of layers provided between the first electrode and the second electrode; wherein the stack of layers comprises one light absorbing layer provided with a perovskite crystal structure; and at least one dopant layer, wherein the dopant layer consists of one or more n-dopant material(s); or one or more p-dopant material(s).

Solar cell

The present invention is directed to an ink composition for forming an organic semiconductor layer, wherein the ink composition comprises: &#x2014;at least one p-type dopant comprising electron withdrawing groups; &#x2014;at least one first auxiliary compound, wherein the first auxiliary compound is an aromatic nitrile compound, wherein the aromatic nitrile compound has about &#x2265;1 to about &#x2264;3 nitrile groups and a melting point of about &#x3c;100&#xb0; C., wherein the first auxiliary compound is different from the p-type dopant; and wherein the electron withdrawing groups are fluorine, chlorine, bromine and/or nitrile.

Ink composition for forming an organic layer of a semiconductor

The present invention relates to compounds that include a nitrogen heteroatom, including a compound of the formula (I). Also provided herein is an organic electronic device comprising the compound and a display device or lighting device comprising the organic electronic device.

Compound, organic electronic device comprising the same, and display device and lighting device comprising the same

The present invention relates to a method for preparing an organic semiconductor layer in a vacuum chamber at a pressure of 10to 10mbar comprising a step of sublimating a composition from a single vacuum thermal evaporation source arranged in the vacuum chamber, wherein the composition comprises a physical mixture of (a) a first organic aromatic matrix compound having a molecular weight &#x2265;400 and &#x2264;1,000: and (b) a first alkali organic complex having a molecular weight of &#x2265;100 and &#x2264;400.

Method for preparing an organic semiconductor layer and an organic electronic device

The present invention relates to a charge transporting semi-conducting material comprising: a) at least one electrical dopant, and b) a branched or cross-linked charge-transporting polymer comprising cyclobutenone cross-linking units of at least one of the general formulae la and/or lb, wherein aa) Pol, Pol, Poland Polare independently selected chains of the charge-transporting polymer, bb) X, X, X, and Xare independently selected optional spacer units or, independently, represent direct bonding of Pol, Pol, Poland Polchains to the cyclobutenone ring, cc) Z, Z, Z, and Zare independently selected from H, halogen or a carbon-containing group; the charge transporting semi-conducting material being obtainable by a process comprising: i) providing a solution containing aaa) at least one precursor charge transporting compound comprising at least one covalently attacked alkenyloxy group having generic formula II wherein X is an optional spacer which is further linked to a charge transporting structural moiety of the precursor charge transporting compound, the dashed line represents the bonding to a charge transporting structural moiety of the precursor charge transporting compound and Z, Z, Z, and Zare independently selected from H, halogen or the carbon-containing group, bbb) at least one electrical dopant, ccc) at least one solvent, ii) depositing the solution on a substrate, iii) removing the solvent, and iv) reacting the alkinyloxy groups to effect crosslinking, preferably by heating, wherein the average number of the alkinyloxy groups per one molecule of the precursor charge transporting compound provided in the step i) is equal to or greater than 2, preferably greater than 2.05, and a process for preparing the same.

Charge transporting semi-conducting material and electronic device comprising it

The present invention relates to a charge transporting semi-conducting material. The charge transporting semi-conducting material may include The charge transporting polymer can include ethylene building units substituted with at least one pending side group including a conjugated system of delocalized electrons. Also provided herein are processes for obtaining the charge transporting semi-conducting material.

The invention relates to an electronic device comprising a compound having Formula (1): AB(1), wherein A is a structural moiety that consists of at least two atoms and comprises a conjugated system of delocalized electrons, each B is independently selected from an imine functional group (1a), wherein R, R, R, Rare independently selected from C-Calkyl, C-Calkenyl, C-Calkinyl, C-Ccycloalkyl, C-Caryl, C-Cheteroaryl, C-Carylalkyl, C-Cheteroarylalkyl, the wave line represents a covalent bond to the imine nitrogen atom, G is in each group (1a) independently selected from a quarternary carbon atom and from a cyclopropenylidene structural moiety, x is an integer equal one or higher, preferably equal two or higher, and the lone electron pair of the imine nitrogen atom and/or the pi-electrons of the imine double bond of at least one group B is conjugated with the conjugated system of delocalized electrons comprised in the structural moiety A, with the proviso that two or more of the substituents R, R, R, Rmay be connected to form a ring that may contain also unsaturation and, if any of the substituents R, R, R, Rcomprises two or more carbon atoms, up to one third of the overall count of the carbon atoms in the substituent or in any ring formed by two connected substituents can be replaced with heteroatoms independently selected from O, S, N and B as well as to an electrically semiconducting material and a compound for use in the electronic device. 

Electronic device and compound

Growing community of inventors

Dresden, Germany

Steffen Runge