Ihp Gmbh—innovations for High Performance Microelectronics/leibniz-instituit Fur Innovative Mikroelektronik

Ihp Gmbh - Innovations for High Performance Microelectronic / Institut Fur Innovative Mikroelektronik

Ihp Gmbh-innovations for High Performance Microelectronics/leibniz-institut Fur Innovative Mikroelektronik

Steffen Marschmayer

Bernd Heinemann

Karl-Ernst Ehwald

Dieter Knoll

Holger Rücker

Jürgen Drews

Alexander Fox

Bernd Heinenman

Katrin Blum

Bernd Heineman

A complementary BiCMOS semiconductor device comprises a substrate of a first conductivity type and a number of active regions which are provided therein and which are delimited in the lateral direction by shallow field insulation regions, in which vertical npn-bipolar transistors with an epitaxial base are arranged in a first subnumber of the active regions and vertical pnp-bipolar transistors with an epitaxial base are arranged in a second subnumber of the active regions, wherein either one transistor type or both transistor types have both a collector region and also a collector contact region in one and the same respective active region. To improve the high-frequency properties exclusively in a first transistor type in which the conductivity type of the substrate is identical to that of the collector region, an insulation doping region is provided between the collector region and the substrate.

Bipolar complementary semiconductor device

The invention concerns a bipolar transistor with an epitaxially grown base and a self-positioned emitter, whereby the base is formed from a first substantially monocrystalline epitaxial region () which is arranged in parallel relationship to the surface of the semiconductor substrate () and a second substantially polycrystalline and highly doped region () of the same conductivity type which is arranged in perpendicular relationship to the substrate surface and encloses the first region at all sides and that said second region, at least at one side but preferably at all four sides, is conductingly connected to a third, preferably highly doped or metallically conducting, high temperature-resistant polycrystalline layer () which is arranged in parallel relationship to the surface of the semiconductor substrate and forms or includes the outer base contact to a metallic conductor track system.

BiCMOS structure, method for producing the same and bipolar transistor for a BiCMOS structure

Growing community of inventors

Frankfurt-am-Main, Germany

Steffen Marschmayer