Infineon Technologies Dresden Gmbh

Infineon Technologies Dresden Gmbh & Co . Kg

Infineon Technologies Ag

Other

Steffen Bieselt

Thoralf Kautzsch

Mirko Vogt

Maik Stegemann

Heiko Froehlich

Alessia Scire

Andre Roeth

Dirk Meinhold

Bernhard Winkler

Erhard Landgraf

Hans-Joachim Schulze

Franz Hirler

Anton Mauder

Francisco Javier Santos Rodriguez

Wolfgang Scholz

Sebastian Pregl

Boris Binder

Stephan Gerhard Albert

Matthias Rose

Horst Theuss

Alfons Dehe

Bernhard Knott

Uwe Rudolph

Wolfram Langheinrich

Mohsin Nawaz

Marco Mueller

Marco Haubold

Andre Röth

Heiko Fröhlich

Daniel Koehler

Claudia Hengst

A semiconductor component includes: a silicon-based substrate; an oxide layer atop the silicon-based substrate; an electronic component based on polycrystalline silicon; a crystalline silicon layer atop the silicon-based substrate and atop lateral faces of the oxide layer; and a lid connected to the crystalline silicon layer. The lid is a glass-based lid, a quartz-based lid or a silicon-based lid.

Semiconductor component including an electronic component based on polycrystalline silicon

In some implementations a semiconductor die comprises a semiconductor chip. The semiconductor chip comprises a piezoresistive pressure sensor element and at least one capacitive acceleration sensor element. The piezoresistive pressure sensor element is arranged to the side of the capacitive acceleration sensor element. In some implementations, a method for producing a semiconductor die includes applying an insulation layer to the semiconductor wafer. A section of the monocrystalline cover layer may be exposed by structuring the insulation layer. A semiconductor layer having a monocrystalline section and a polycrystalline section may be generated by deposition of a semiconductor material.

Semiconductor die with pressure and acceleration sensor elements

A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

Capacitive microelectromechanical device and method for forming a capacitive microelectromechanical device

A sensor system with a first semiconductor die part and with a second semiconductor die part is proposed, wherein the first semiconductor die part has a microelectromechanical sensor element, wherein the second semiconductor die part covers the microelectromechanical sensor element, wherein the second semiconductor die part has a via for electrically contacting the microelectromechanical sensor element, in particular directly. A method for producing a sensor system is also proposed.

Sensor system with a microelectromechanical sensor element and method for producing a sensor system

A method of producing a semiconductor component includes: providing a silicon-based substrate; depositing an oxide layer on the silicon-based substrate; depositing a polycrystalline silicon layer on the oxide layer and simultaneously a crystalline silicon layer on the silicon-based substrate; producing an electronic component based on the polycrystalline silicon layer; and mounting a glass- or silicon-based lid on the crystalline silicon layer.

Method of producing a semiconductor component and semiconductor component

A method produces a micromechanical sensor element having a first electrode and a second electrode, wherein electrode wall surfaces of the first and the second electrodes are situated opposite one another in a first direction and form a capacitance, wherein one of the first electrode or the second electrode is movable in a second direction, in response to a variable to be detected, and a second one of the first electrode and the second electrode is fixed. The method includes producing a cavity in a semiconductor substrate, the cavity being closed by a doped semiconductor layer; producing the first and the second electrodes in the semiconductor layer, including modifying the electrode wall surface of the first electrode in order to have a smaller extent in the second direction than the electrode wall surface of the second electrode.

Micromechanical sensor and methods for producing a micromechanical sensor and a micromechanical sensor element

A method for manufacturing a microelectromechanical systems (MEMS) device, includes forming a cavity in a bulk semiconductor substrate; defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity; arranging a cap structure on the main surface area of the bulk semiconductor substrate; and forming a capacitive structure. Forming the capacitive structure includes arranging a first electrode structure on the movably suspended mass; and providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.

Microelectromechanical device, method for manufacturing a microelectromechanical device, and method for manufacturing a system on chip using a CMOS process

A micro-electro-mechanical sensor comprises a first substrate comprising an element movable with respect to the first substrate and a second substrate comprising a first contact pad and a second contact pad. The first substrate is bonded to the second substrate such that a movement of the element changes a coupling between the first contact pad and the second contact pad.

Micro-mechanical sensor and method for manufacturing a micro-electro-mechanical sensor

A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.

Stressed decoupled micro-electro-mechanical system sensor

A micromechanical sensor includes a first and a second capacitive sensor element each having a first and a second electrode, wherein electrode wall surfaces of the first electrode and the second electrode are situated opposite one another in a first direction and form a capacitance, wherein the first electrodes are movable in a second direction, which is different than the first direction, in response to a variable to be detected, and the second electrodes are stationary. The electrode wall surface of the first electrode of the first sensor element has a smaller extent in the second direction than the opposite electrode wall surface of the second electrode of the first sensor element. The electrode wall surface of the second electrode of the second sensor element has a smaller extent in the second direction than the opposite electrode wall surface of the first electrode of the second sensor element.

A microelectromechanical systems (MEMS) device is provided and includes a bulk semiconductor substrate, a cavity formed in the bulk semiconductor substrate, a movably suspended mass, a cap structure and a capacitive structure is shown. The movably suspended mass is defined in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity. The cap is structure arranged on the main surface area of the bulk semiconductor substrate. The capacitive structure comprises a first electrode structure arranged on the movably suspended mass and a second electrode structure arranged at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.

A method for forming a microelectromechanical device is shown. The method comprises forming a cavity in a semiconductor substrate material, wherein the semiconductor substrate material comprises an opening for providing access to the cavity through a main surface area of the semiconductor substrate material. In a further step, the method comprises forming a support structure having a support structure material different from the semiconductor substrate material to close the opening at least partially by mechanically connecting the main surface area of the semiconductor substrate material with the bottom of the cavity. Furthermore, the method comprises a step of forming a lamella structure in the main surface area above the cavity such that the lamella structure is held spaced apart from the bottom of the cavity by the support structure.

Microelectromechanical device and method for forming a microelectromechanical device having a support structure holding a lamella structure

The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.

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Stadt Wehlen, Germany

Steffen Bieselt