South China Normal University

Stefano Sanguinetti

Guofu Zhou

Peng Wang

Richard Notzel

Provided is a nanowire array, in which a plurality of nanowires are densely packed and in contact with each other via side walls to form a three-dimensional, compact layer structure, wherein the plurality of nanowires are formed from InGaN-based material. Also provided is an optoelectronic device comprising the nanowire array which is epitaxially grown on a surface of a substrate (). Further provided are methods for preparing the nanowire array and the optoelectronic device.

Nanowire array, optoelectronic device and preparation method thereof

Provided are a method for preparing an InGaN-based epitaxial layer on a Si substrate (), as well as a silicon-based InGaN epitaxial layer prepared by the method. The method may include the steps of: 1) directly growing a first InGaN-based layer () on a Si substrate (); and 2) growing a second InGaN-based layer on the first InGaN-based layer ().

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Milan, Italy

Stefano Sanguinetti