Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Albert-Ludwigs-Universitat Freiburg

Stefano Leone

Christian Manz

Hanspeter Menner

Jana Ligl

Joachim Wiegert

A semiconductor layer and a method and an apparatus for its manufacturing are disclosed. The semiconductor layer includes at least one compound of the formula MMN, where Mis selected from group 13 of the periodic table and Mis selected from the group including scandium, yttrium, erbium, and europium and where the parameter a is selected between 0.01 and 0.99. The method includes supplying a first precursor into a reaction chamber, the first precursor including at least Mand being supplied to the reaction chamber at a molar flow rate of at least 1·10mol/min by providing the first precursor by means of a first bubbler from which it is evaporated and supplied to the reaction chamber, the temperature of the first bubbler being more than 90° C.

Method and apparatus for manufacturing a semiconductor layer and substrate provided therewith

A semiconductor layer and a method and an apparatus for its manufacturing are disclosed. The semiconductor layer includes at least one compound of the formula MMN, where Mis selected from group 13 of the periodic table and Mis selected from the group comprising scandium, yttrium, erbium, and europium and where the parameter a is selected between 0.01 and 0.99. The method includes supplying a first precursor into a reaction chamber, the first precursor including at least Mand being supplied to the reaction chamber at a molar flow rate of at least 1·10mol/min by providing the first precursor by means of a first bubbler from which it is evaporated and supplied to the reaction chamber, the temperature of the first bubbler being more than 90° C.

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Freiburg, Germany

Stefano Leone