Micron Technology Incorporated

Stefano Falduti

Giuseppe Cariello

Ugo Russo

Mauro Luigi Sali

Devices and techniques for adjustable memory device write performance are described herein. An accelerated write request can be received at a memory device from a controller of the memory device. The memory device can identify that a target block for external writes is opened as a multi-level cell block. The memory device can then write data for the accelerated write request to the target block using a single-level cell encoding.

Growing community of inventors

Vimercate, Italy

Stefano Falduti