Tel Solar Ag

Stefano Benagli

Ulrich Kroll

Johannes Meier

Daniel Borrello

Evelyne Vallat-Sauvain

Castens Lucie

Giovanni Monteduro

Miguel Marmelo

Jochen Hoetzel

Yassine Djeridane

Jerome Steinhauser

Jean-Baptiste Orhan

Sylvie-Noelle Bakehe-Ananga

A method for manufacturing a micromorph tandem cell is disclosed. The micromorph tandem cell comprises a &#x3bc;c-Si:H bottom cell and an a-Si:H top cell, an LPCVD ZnO front contact layer and a ZnO back contact in combination with a white reflector. The method comprises the steps of The micromorph tandem cell can achieve a stabilized efficiency of 10.6%.

High efficiency micromorph tandem cells

So as to manufacture an intrinsic absorber layer of amorphous hydrogenated silicon within a p-i-n configuration a solar cell by PeCvD deposition upon a base structure, thereby improving throughput an simultaneously maintaining quality of the absorber layer, a specific processing regime is proposed, wherein in the reactor for depositing the addressed absorber layer a pressure of between 1 mbar and 1.8 mbar is established and a flow of silane and of hydrogen with a dilution of silane to hydrogen of 1:4 up to 1:10 and generating an RF plasma with a generator power of between 600 W and 1200 W per 1.4 mbase structure surface to be coated.

Intrinsic absorber layer for photovoltaic cells

A thin film photovoltaic device on a substrate is being realized by a method for manufacturing a p-i-n junction semiconductor layer stack with a p-type microcrystalline silicon layer, a p-type amorphous silicon layer, a buffer silicon layer comprising preferably intrinsic amorphous silicon, an intrinsic type amorphous silicon layer, and an n-type silicon layer over the intrinsic type amorphous silicon layer.

Method for depositing an amorphous silicon film for photovoltaic devices with reduced light-induced degradation for improved stabilized performance

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Neuchatel, Switzerland

Stefano Benagli