Infineon Technologies LLC

Cypress Semiconductor Corporation

Stefano Amato

Shivananda Shetty

Yoram Betser

Alexander Kushnarenko

Pawan Kishore Singh

James Minsu Pak

Amichai Givant

Amir Rochman

Cindy Sun

Itzic Cohen

Idan Koren

Jonas Neo

Pawan Singh

Systems, methods, and devices prevent data loss in memory devices. Systems may include a non-volatile memory device that includes a first data unit configured to store data for the non-volatile memory device and associated metadata, and a second data unit configured to store data for the non-volatile memory device and associated metadata, wherein the first data unit and second data unit are configured to alternate storing a most recent version of the data and associated metadata. The systems may also include control circuitry configured to read metadata from the first data unit and the second data unit, identify the first data unit as an inactive data unit based on contents of the first data unit and the second data unit, and perform one or more update operations such that the first data unit is updated and set as an active unit when the update operations are complete.

Data loss protection for memory systems and devices

Systems, methods, and devices dynamically determine sensing levels for memory devices. Devices include nonvolatile memory cells included in a plurality of memory sectors, a plurality of static reference cells configured to represent a first reference value for distinguishing between memory states, and a plurality of dynamic reference cells configured to represent the first reference value after a designated amount of memory sector activity. Devices also include a comparator configured to be coupled to at least one memory cell of the plurality of memory cells and to at least two of the plurality of static reference cells and the plurality of dynamic reference cells, and further configured to determine a memory state of the at least one memory cell based, at least in part, on a second reference value determined by a combination of at least two of the plurality of static reference cells and the plurality of dynamic reference cells.

Dynamic sensing levels for nonvolatile memory devices

A method of operating a memory circuit is disclosed. The memory circuit includes a memory array having a memory portion and a spare portion. The method includes receiving a first write command to a first memory address, where the first memory address has a status of being mapped to a first spare memory address, and where the first memory address corresponds to a first memory location in the memory portion and the first spare memory address corresponds to a first spare memory location in the spare portion. The method also includes performing, in response to the first write command, a first write operation by attempting to write first data to the first memory location, determining if the first write operation is successful, and unmapping, in response to the first write operation of being successful, the first memory address from the first spare memory address.

Memory location mapping and unmapping

A non-volatile memory device and methods for operating the same are provided. The memory device may have multiple complementary memory cells. The method of blank check includes detecting a state value of each of the true and complementary transistors, generating an upper state value, Wherein a first predetermined amount of the true and complementary transistors have greater state values than the upper state value, generating a lower state value, wherein a second predetermined amount of the true and complementary transistors have less state values than the lower state value, generating a state value range based on a difference between the upper state value and the lower state value, and comparing the state value range to a threshold value to determine whether the plurality of complementary memory cells is in a blank state or a non-blank state. Other embodiments are also disclosed herein.

Non-volatile memory device and method of blank check

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San Jose, CA, United States of America

Stefano Amato