Osram Opto Semiconductors Gmbh

Osram Opto Semiconductor Gmbh

Stefanie Rammelsberger

Karl Engl

Markus Maute

Anna Kasprzak-Zablocka

Korbinian Perzlmaier

Christian Leirer

Guido Weiss

Robert Walter

Kai Gehrke

Julian Ikonomov

Johann Eibl

Alfred Lell

Lutz Höppel

Sebastian Taeger

Nikolaus Gmeinwieser

Michael Huber

Rainer Hartmann

Björn Hoxhold

Georg Hartung

An optoelectronic lamp device includes an optoelectronic semiconductor component including a top side including a light-emitting face, and a housing embedding the semiconductor component and leaving free the light-emitting face, wherein a housing face is coated with a light-scattering dielectric resist layer that may scatter light incident on a face of the resist layer facing away from the housing face.

Optoelectronic lamp device and method of producing same

An optoelectronic semiconductor component comprises an optoelectronic semiconductor chip (C) having an electrically conductive substrate (T), an active part (AT) containing epitaxially grown layers, and an intermediate layer (ZS) which is arranged between the substrate (T) and the active part (AT) and contains a solder material. The optoelectronic semiconductor component further comprises an electrical connection point, which at least partially covers an underside of the substrate (T), wherein the electrical connection point comprises a first contact layer (KS) on a side facing the substrate (T), and the first contact layer (KS) contains aluminium or consists of aluminium.

Optoelectronic semiconductor component, optoelectronic arrangement and method for producing an optoelectronic semiconductor component

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip; and an electrical connection point that contacts the optoelectronic semiconductor chip, wherein the electrical connection point covers the optoelectronic semiconductor chip on the bottom thereof at least in some areas, the electrical connection point includes a contact layer facing toward the optoelectronic semiconductor chip, the electrical connection point includes at least one barrier layer arranged on a side of the contact layer facing away from the optoelectronic semiconductor chip, the electrical connection point includes a protective layer arranged on the side of the at least one barrier layer facing away from the contact layer, the layers of the electrical connection point are arranged one on top of another along a stack direction, and the stack direction runs perpendicular to a main extension plane of the optoelectronic semiconductor chip.

Optoelectronic semiconductor component, optoelectronic arrangement and method of producing an optoelectronic semiconductor component

An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.

Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips

A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

Light emitting diode chip

An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.

Optoelectronic semiconductor chip encapsulated with an ALD layer and corresponding method for production

A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide.

A light emitting diode chip includes a semiconductor layer sequence, the semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side. At a rear side lying opposite the radiation exit area, the light emitting diode chip has, at least in regions, a mirror layer containing silver. A functional layer that reduces corrosion and/or improves adhesion of the mirror layer is arranged on the mirror layer, wherein a material from which the functional layer is formed is also distributed in the entire mirror layer. The material of the functional layer has a concentration gradient in the mirror layer, wherein the concentration of the material of the functional layer in the mirror layer decreases proceeding from the functional layer in the direction toward the semiconductor layer sequence.

A broad stripe laser () comprising an epitaxial layer stack (), which contains an active, radiation-generating layer () and has a top side () and an underside (). The layer stack () has trenches () in which at least one layer of the layer stack () is at least partly removed and which lead from the top side () in the direction of the underside (). The layer stack () has on the top side ridges () each adjoining the trenches (), such that the layer stack () is embodied in striped fashion on the top side. The ridges () and the trenches () respectively have a width (d, d) of at most 20 &#x3bc;m.

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Zeitlarn, Germany

Stefanie Rammelsberger