Stmicroelectronics S.r.l.

Stmicroelectronics Asia Pacific Pte Limited

Stefania Fortuna

Leonardo Fragapane

Antonino Alessandria

Angelo Magri

Angelo Magri'

Angelo Magri′

Yean Ching Yong

A power MOSFET device includes an active area accommodating a first body region and a second body region having a first and, respectively, a second conductivity value. The second value is higher than the first value. A first channel region is disposed in the first body region between a first source region and a drain region, and the first channel region has and having a first channel length. A second channel region is disposed in the second body region between a second source region and the drain region, and the second channel region has and having a second channel length smaller than the first channel length. A first device portion, having a first threshold voltage, includes the first channel region, and a second device portion, having a second threshold voltage higher than the first threshold voltage, includes the second channel region.

Power MOSFET device having improved safe-operating area and on resistance, manufacturing process thereof and operating method thereof

A power device integrated on a semiconductor substrate and having a plurality of conductive bridges within a trench gate structure. In an embodiment, a semiconductor substrate includes a trench having sidewalls and a bottom, the walls and bottom are covered with a first insulating coating layer which then also includes a conductive gate structure. An embodiment provides the formation of the conductive gate structure with covering at least the sidewalls with a second conductive coating layer of a first conductive material. This results in a conductive central region of a second conductive material having a different resistivity than the first conductive material forming a plurality of conductive bridges between said second conductive coating layer and said conductive central region.

Integrated power device on a semiconductor substrate having an improved trench gate structure

A method for forming a trench MOSFET includes doping a body region of the trench MOSFET in multiple ion implantation steps each having different ion implantation energy. The method further comprises etching the trench to a depth of about 1.7 &#x3bc;m.

Trench MOSFET

An embodiment of a method for manufacturing a power device with conductive gate structures inside etched trenches. Such trenches include sidewalls and a bottom, wherein covering the sidewalls and the bottom of the trench is a first insulating coating layer. In the formation of the conductive gate structure, openings within the first material in the trench are made such that a conductive central region of a second conductive material having a different resistivity than the first conductive material are able to be electrically coupled together through a plurality of conductive bridges between said second conductive coating layer and said conductive central region.

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Aci Castello, Italy

Stefania Fortuna