Infineon Technologies Ag

Stefan Wurn

Till Schloesser

Siegfried Schwarzl

Joachim Nuetzel

To integrate a capacitor device () into the region of a semiconductor memory device with a particularly small number of process steps, a lower electrode device () and an upper electrode device () of the capacitor device () are provided to be formed directly underneath or directly above the material region () which has the memory elements (), in such a way that as a result at least a part of the material region () which has the memory elements () functions at least as part of the respective dielectric () between the electrodes devices ().

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Austin, TX, United States of America

Stefan Wurn