Infineon Technologies Ag

Infineon Technologies Austria Ag

Stefan Woehlert

Stefan Krivec

Stefan Kramp

Werner Robl

Michael Nelhiebel

Thomas Detzel

Roland Rupp

Robert Illing

Michael Treu

Evelyn Napetschnig

Ronny Kern

Thomas Gutt

Gregor Langer

Sven Lanzerstorfer

Hannes Winkler

Francisco Javier Santos Rodriguez

Jens Peter Konrath

Romain Esteve

Wolfgang Bergner

Ravi Keshav Joshi

Andreas Voerckel

Michael Rogalli

Jochen Hilsenbeck

Tobias Schmidt

Kamil Karlovsky

Paul Frank

Karl Mayer

Florian Grasse

Michael Ehmann

Frank Wagner

Eric Graetz

Gretchen Adema

Markus Leicht

Joachim Seifert

Richard Gaisberger

Srinivasa Reddy Yeduru

Karl Heinz Gasser

Hiroshi Narahashi

Thomas Bertaud

Johann Gross

Maximilian Krug

Grzegorz Lupina

Ralf Otremba

Manfred Schneegans

Christoph Kadow

Alexander Komposch

Holger Schulze

Edmund Riedl

Paul Ganitzer

Uwe Hoeckele

Christian Djelassi

Kurt Matoy

Hubert Maier

Stefan Decker

Bernhard Auer

Hannes Eder

Arno Zechmann

Siegfried Roehl

Daniel Kraft

Kai-Alexander Schreiber

Daniel Bolowski

Marian Sebastian Broll

Gert Pfahl

Michael Kreuz

A chip is provided. In an embodiment, the chip includes a silicon carbide substrate, a first sputtered metal layer on the silicon carbide substrate, and at least one second sputtered metal layer on the first sputtered metal layer. The first sputtered metal layer and the at least one second sputtered metal layer form an electrical contact. In another embodiment, the chip includes a silicon carbide substrate, a nickel-silicon layer on the silicon carbide substrate, and a layer sequence including a titanium layer, a nickel-containing layer, and a gold-tin or silver layer on the nickel-silicon layer.

Chip with a silicon carbide substrate

A semiconductor device includes a contact metallization layer that includes aluminum and is arranged on a semiconductor substrate, an inorganic passivation structure arranged on the semiconductor substrate, an organic passivation layer comprising a first part that is arranged on the contact metallization layer, and a second part that is arranged on the inorganic passivation structure, a first layer structure including a first part that is in contact with the contact metallization layer, a second part that is contact with the inorganic passivation structure, and a third part that is disposed on the semiconductor substrate laterally between the inorganic passivation structure and the organic passivation layer.

Semiconductor device and method for forming a semiconductor device

A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.

Process for producing an electrical contact on a silicon carbide substrate

An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

Electronic device, electronic module and methods for fabricating the same

A semiconductor substrate has a bond pad. The bond pad includes a layer of an aluminum alloy having a chemical composition including at least 0.3% by weight of at least one of Zn, Mg, Sc, Zr, Ti, Ag and/or Mn, with the balance being at least Al and incidental impurities.

Semiconductor substrate having a bond pad material based on aluminum

A semiconductor device includes a contact metallization layer arranged on a semiconductor substrate, an inorganic passivation structure arranged on the semiconductor substrate, and an organic passivation layer. The organic passivation layer is located between the contact metallization layer and the inorganic passivation structure, and located vertically closer to the semiconductor substrate than a part of the organic passivation layer located on top of the inorganic passivation structure.

A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a chemical cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.

Electrical contact connection on silicon carbide substrate

A semiconductor device includes a base element and a copper element over the base element. The copper element includes a layer stack having at least two copper layers and at least one intermediate conductive layer of a material different from copper. The at least two copper layers and the at least one intermediate conductive layer are alternately stacked over each other.

Semiconductor device having a copper element and method of forming a semiconductor device having a copper element

A method for processing a wafer in accordance with various embodiments may include: removing wafer material from an inner portion of the wafer to form a structure at an edge region of the wafer to at least partially surround the inner portion of the wafer, and printing material into the inner portion of the wafer using the structure as a printing mask. A method for processing a wafer in accordance with various embodiments may include: providing a carrier and a wafer, the wafer having a first side and a second side opposite the first side, the first side of the wafer being attached to the carrier, the second side having a structure at an edge region of the wafer, the structure at least partially surrounding an inner portion of the wafer; and printing material onto at least a portion of the second side of the wafer.

Method for processing a wafer and wafer structure

An electrically conductive element includes an electrically conductive material and a plurality of inclusions of a phase change material. The phase change material has a phase transition temperature Tc between 150&#xb0; C. and 400&#xb0; C. The inclusions are separated from each other and are embedded in the electrically conductive material.

Electrically conductive element, power semiconductor device having an electrically conductive element and method of manufacturing a power semiconductor device

A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.

Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching

An integrated circuit includes a base element and a copper element over the base element, the copper element having a thickness of at least 5 &#x3bc;m and a ratio of average grain size to thickness of less than 0.7.

Integrated circuit and method of forming an integrated circuit

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Villach, Austria

Stefan Woehlert