Carl Zeiss Smt Gmbh

Carl-zeiss-smt Ag

Stefan Wiesner

Wolfgang Singer

Udo Dinger

Dirk Heinrich Ehm

Stefan-Wolfgang Schmidt

Dieter Kraus

Armin Schoeppach

Stefan Hembacher

Hartmut Enkisch

Ulrich Bingel

Gerd Klose

Moritz Becker

Hin Yiu Anthony Chung

Gennady Fedosenko

Leonid Gorkhover

Almut Czap

Irene Ament

Claudia Ekstein

Stefan Koehler

Hans-Joachim Trefz

Diana Urich

Eric Eva

Alexandra Pazidis

Florian Bach

Vitaliy Shklover

Berndt Warm

Michael Widmann

Guenter Albrecht

Johannes Rau

Holger Kierey

Armin Werber

Severin Waldis

Wilfried Noell

Ralf Winter

Yim-Bun-Patrick Kwan

Daniel Benz

Michael Thier

Christof Jalics

Stefan Wolfgang Schmidt

Jens Ullmann

Stefan Burkart

Robert Meier

Annette Muehlpfordt

Christoph Zazcek

Jens Luedecke

Johnannes Rau

Jürgen Baier

Christos Kourouklis

Sigfried Rennon

Günther Dengel

A projection exposure apparatus () for semiconductor lithography contains at least one partial volume () that is closed off from the surroundings. The partial volume () contains a gas, from which a plasma can be produced. Conditioning elements () for conditioning the plasma, in particular for neutralizing the plasma, are present in the partial volume. An associated method for operating a projection exposure apparatus is also disclosed.

Projection exposure system for semiconductor lithography, comprising elements for plasma conditioning

In order to prevent delamination of a reflective coating from the substrate under the influence of reactive hydrogen, a reflective optical element () for EUV lithography is provided, which has a substrate () and a reflective coating () for reflecting radiation in the wavelength range of 5 nm to 20 nm. A functional layer () is arranged between the reflective coating () and the substrate (). With the functional layer, the concentration of hydrogen in atom % at the side of the substrate facing the reflective coating is reduced by at least a factor of 2.

Reflective optical element for EUV lithography

A method and a device for the material-fit connection of an optical element to a frame are disclosed.

Method and device for connecting an optical element to a frame

In order to clean optical components () inside an EUV lithography device in a gentle manner, a cleaning module for an EUV lithography device includes a supply line for molecular hydrogen and a heating filament for producing atomic hydrogen and hydrogen ions for cleaning purposes. The cleaning module also has an element, () arranged to apply an electric and/or magnetic field, downstream of the heating filament () in the direction of flow of the hydrogen (). The element can be designed as a deflection unit, as a filter unit and/or as an acceleration unit for the ion beam ().

Cleaning module, EUV lithography device and method for the cleaning thereof

An EUV lithography device including an illumination device for illuminating a mask at an illumination position in the EUV lithography device and a projection device for imaging a structure provided on the mask onto a light-sensitive substrate. The EUV lithography device has a processing device () for processing an optical element (), in particular the mask, preferably in a locally resolved manner, at a processing position in the EUV lithography device. For activating at least one gas component of the gas stream (), the processing device () includes a particle generator () for generating a particle beam, in particular an electron beam (), and/or a high-frequency generator.

EUV lithography device and method for processing an optical element

A mirror serves for guiding a radiation bundle. The mirror has a basic body and a coating of a reflective surface of the basic body, the coating increasing the reflectivity of the mirror. A heat dissipating device serves for dissipating heat deposited in the coating. The heat dissipating device has at least one Peltier element. The coating is applied directly on the Peltier element. A temperature setting apparatus has at least one temperature sensor for a temperature of the reflective surface. A regulating device of the Temperature setting apparatus can be connected to the at least one Peltier element and is signal-connected to the at least one temperature sensor. The result is a mirror in which a heat dissipating capacity of the heat dissipating device is improved.

Mirror for guiding a radiation bundle

A method and a device for decontaminating optical surfaces, in particular for decontaminating the surfaces of beam-guiding optics employing UV-radiation in a cleansing atmosphere. The wavelength of the UV-radiation employed falls within a range where oxygen strongly absorbs and the cleansing atmosphere has an oxygen concentration less than that of air. The method and device have application to, e.g., cleaning the surfaces of the beam-guiding optics of microlithographic projection-exposure systems.

Method and device for decontaminating optical surfaces

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Lauchheim, Germany

Stefan Wiesner