L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

American Air Liquide, Inc.

Stefan Wiese

Jean-Marc Girard

Guillaume Husson

Nicolas Blasco

Yumin Liu

Grigory Nikiforov

Satoko Gatineau

Feng Li

Zhiwen Wan

Kohei Tarutani

Christian Dussarrat

Claudia Fafard

Bin Sui

A preprocessing method comprises a sintering step of heating a solid material container filled with a solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and crystallizing at least part of the solid material, and an impurity removal step of heating the solid material container filled with the solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and removing at least part of the impurities included in the solid material.

Preprocessing method for solid material, and solid material product filled with solid material manufactured using said solid material preprocessing method

Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

Heterogeneous wet synthesis process for preparation of high purity tungsten pentahalide

Manganese-containing film forming compositions, their preparation, and their use for the vapor deposition of films are disclosed. The manganese-containing film forming compositions comprise silylamide-containing precursors, particularly {Mn[N(SiMeEt)]}.

Manganese-containing film forming compositions, their synthesis, and use in film deposition

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San Jose, CA, United States of America

Stefan Wiese