Other

Oclaro Technology Limited

Ii-vi Laser Enterprise Gmbh

Stefan Weiss

Norbert Lichtenstein

Julien Boucart

Martin Krejci

René Todt

Jürgen Müller

Reinhard Brunner

Rainer Bättig

Hans Jörg Troger

A diode laser bar assembly is formed to exhibit a relatively low thermal resistance, which also providing an increased range of conditions over which the internal stress conditions may be managed. In particular, the submount configuration of the prior art is replaced by a pair of platelets, disposed above and below the diode laser bar so as to form a 'sandwich' structure. The bottom platelet is disposed between the heatsink (cooler) and the diode laser bar. Thus, the bottom platelet may be relatively thin, creating a low thermal resistance configuration. The combination of the top and bottom platelets provides the ability to create various configurations and designs that best accommodate stress conditions for a particular situation.

Low thermal resistance, stress-controlled diode laser assemblies

A high power laser source comprises a bar of laser diodes having a first coefficient of thermal expansion CTEon a submount having a second coefficient CTEand a cooler having a third coefficient CTE. The submount/cooler assembly shows an effective fourth coefficient CTEdiffering from CTE. This difference leads to a deformation of the crystal lattice of the lasers' active regions by mechanical stress. CTEis selected to be either lower than both CTEand CTEor is selected to be between CTEand CTE. The submount may either comprise layers of materials having different CTEs, e.g., a Cu layer of 10-40 &#x3bc;m thickness and a Mo layer of 100-400 &#x3bc;m thickness, or a single material with a varying CTE. Both result in a CTEvarying across the submount's thickness.

High power semiconductor laser diodes

Growing community of inventors

Langnau am Albis, Switzerland

Stefan Weiss