Siemens Aktiengesellschaft

Osram Opto Semiconductors Gmbh

Siemens Healthineers Ag

Siemens Medical Solutions Usa, Inc.

Siemens Energy Global Gmbh & Co. Kg

Siemens Schweiz Ag

Stefan Stegmeier

Roland Pohle

Karl Weidner

Maximilian Fleischer

Walter Wegleiter

Jörg Zapf

Thomas Weidinger

Stefan Illek

Vladimir Danov

Ingo Euler

Michael Wimmer

Markus Lasch

Oliver Von Sicard

Juergen Moosburger

Daniel Schmitt

Bernd Müller

Frank Schremmer

Jörg Strogies

Stephan Neugebauer

Stefan Waffler

Florian Schwarz

Hubert Baueregger

Markus Pfeifer

Albrecht Donat

Axel Ganster

Martin Seifert

Marcus Wahle

Paola Altieri-Weimar

Jürgen Stephan

Benjamin Sahan

Gerhard Mitic

Volker Müller

Matthias Heimann

Erik Weisbrod

Felix Zeyss

Stefan Kiefl

Caroline Cassignol

Andreas Hader

Roland Lorz

Franziska Lambrecht

Xuanming Lu

Ronny Werner

Steffen Pierstorf

Torsten Stoltze

Maximillian Fleischer

Alexander Hensel

Dulijano Pecanac

Oliver Raab

Thomas Kübel

Ulrich Hoefer

Michael Ott

Volkmar Sommer

Christian Radüge

Daniel BÖHME

Thomas Berthold

An arrangement for a semiconductor arrangement includes a substrate including a dielectric material layer and a first metallization arranged on the dielectric material layer. A passive component is arranged completely in a cutout of the first metallization and bears directly on the dielectric material layer. The passive component is designed to include a first profile. The the first metallization includes a second profile in a region of contacting with the passive component, with the first and second profiles engaging with one another.

Arrangement for a semiconductor arrangement comprising at least one passive component and a substrate

Various embodiments include a method for producing a least one conductive track comprising: forming a surface with a thermoplastic; and depositing conductive track material on the surface by thermal spraying.

Method for producing conductive tracks, and electronic module

A two-phase cooling system for an X-ray high-voltage generator comprises a heat sink block and a heat sink. The heat sink block spatially surrounds a cooling duct loop, wherein the cooling duct loop is at least partially filled with a working medium and is configured to act as an oscillating heat pipe. The heat sink is configured to dissipate heat from a heat source. The heat sink block includes a material including a polymer.

X-ray high-voltage generator with an oscillating heat pipe

Various embodiments of the teachings herein include an electronic module comprising: a circuit carrier with an electrically conductive thick film with a thickness of at least 0.5 millimeter; and a plurality of thermally conductive elements connected to one another by a thermally conductive material. The thermally conductive elements have a base area with rotational symmetry.

Electronic module, method for producing an electronic module, and industrial plant

An X-ray high-voltage generator comprises: a circuit arrangement having at least one power electronics circuit part, wherein the at least one power electronics circuit part is configured to form a heat source during operation; and a two-phase cooling system having a heat sink. The at least one power electronics circuit part is directly thermally coupled to the two-phase cooling system to cool the heat source at the heat sink. The two-phase cooling system has a cooling element block that spatially surrounds a cooling channel circuit. The cooling channel circuit is at least partially filled with a working medium, and is configured to act as a heat pipe.

X-ray high-voltage generator having a two-phase cooling system

The invention relates to a method for electrically contacting a component () (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (), at least one open-pored contact piece () is galvanically (electrochemically or free of external current) connected to at least one contact (). In this way, a component module is achieved. The contact () is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact () perpendicular to said contact surface. The temperature of the galvanic connection is at most 100&#xb0; C., preferably at most 60&#xb0; C., advantageously at most 20&#xb0; C. and ideally at most 5&#xb0; C. and/or deviates from the operating temperature of the component by at most 50&#xb0; C., preferably by at most 20&#xb0; C., in particular by at most 10&#xb0; C. and ideally by at most 5&#xb0; C., preferably by at most 2&#xb0; C. The component () can be contacted by means of the contact piece () with a further component, a current conductor and/or a substrate (). Preferably, a component () having two contacts () on opposite sides of the component () is used, wherein at least one open-pored contact piece () is galvanically connected to each contact ().

Method for electrically contacting a component by galvanic connection of an open-pored contact piece, and corresponding component module

The disclosed component module includes a component comprising at least one electric contact to which at least one porous contact piece is connected; the component module further includes a cooling system for fluid-based cooling, said cooling system comprising one or more cooling ducts which are formed by pores of the porous contact piece. The disclosed power module comprises a component module of said type.

Component module and power module

The invention relates to a device (), comprising at least one optoelectronic semiconductor component () and a substrate (), on which the semiconductor component is arranged, wherein an insulating layer () is adjacent to a lateral surface () that bounds the semiconductor component; a contact track () is arranged on a radiation passage surface of the semiconductor component and is connected to an electrically conductive manner to the semiconductor component; the contact track extends beyond the lateral surface of the semiconductor component and is arranged on the insulating layer; and the contact track is relieved with respect to a thermomechanical load occurring perpendicularly to the lateral surface.

Optoelectronic semiconductor device having contact track with relieved thermo-mechanical stress

In at least one embodiment, the semiconductor component includes at least one optoelectronic semiconductor chip having a radiation exit side. The surface-mountable semiconductor component comprises a shaped body that covers side surfaces of the semiconductor chip directly and in a positively locking manner. The shaped body and the semiconductor chip do not overlap, as seen in a plan view of the radiation exit side.

Method for producing an optoelectronic semiconductor component, and optoelectronic semiconductor component

A gas sensor, for example for use in air conditioning systems, has a gas-sensitive layer that includes a material that is sensitive to carbon dioxide. The material has a cross-sensitivity to air humidity. This is compensated for by measurement at two different temperatures. The measured gas values are calculated together, with the assumption that the sensitivity of the gas sensor to carbon dioxide exhibits a different curve with the temperature of the gas sensor than the sensitivity to water.

Device and method for determining carbon dioxide content of air

An ultrasound transducer array is formed with stealth dicing. A laser is used to form defects within the piezoelectric substrate and along the desired kerf locations. The substrate is fractured along the defects. A controlled expansion, such as using thermal expansion, may be used to establish the desired kerf width. Spacers may be used to maintain the desired kerf width. The kerfs are filled to create the ultrasound transducer array.

Method for forming an ultrasound transducer array

An embodiment of the invention generally relates to an FET-based detector for carbon monoxide which is based on two sensitive layers. In at least one embodiment, the first of the sensitive layers is catalytically active and therefore reacts equally to alcohols, in particular ethanol, and carbon monoxide. The second of the sensitive layers is not catalytically active and therefore does not react to carbon monoxide, but only to ethanol. The concentration of carbon monoxide can be deduced from the comparison of the signals of the two layers. The two sensitive layers are implemented via similar metal oxide layers, an additional layer having a catalyst such as palladium being provided for the catalytically active layer. Alternatively, two different layers can be used, one of which is already catalytically active without an additional layer.

Selective detector for carbon monoxide

A gas sensor detects carbon dioxide, for example for use in air-conditioning systems. The gas sensor is based on a field effect transistor construction. It has a polymer-based material sensitive to carbon dioxide as gas-sensitive layer. The material has a cross-sensitivity with respect to air humidity. The influence of humidity is compensated for by using the signal of a humidity sensor.

Carbon dioxide sensor and associated method for generating a gas measurement value

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Munich, Germany

Stefan Stegmeier