Infineon Technologies Ag

Infineon Technologies Austria Ag

Technische Universitat Graz

Stefan Schwab

Martin Mischitz

Markus Heinrici

Ralf Otremba

Alexander Heinrich

Edmund Riedl

Alexander Roth

Stefan Miethaner

Steffen Jordan

Rafael Janski

Susanne Kraeuter

Herbert Hutter

A package includes an electronic component, an inorganic encapsulant encapsulating at least part of the electronic component, and an adhesion promoter between at least part of the electronic component and the encapsulant.

Inorganic encapsulant for electronic component with adhesion promoter

An arrangement is disclosed. In one example, the arrangement of a conductor and an aluminum layer soldered together comprises a substrate and the aluminum layer disposed over the substrate. The aluminum forms a first bond metal. An intermetallic compound layer is disposed over the aluminum layer. A solder layer is disposed over the intermetallic compound layer, wherein the solder comprises a low melting majority component. The conductor is disposed over the solder layer, wherein the conductor has a soldering surface which comprises a second bond metal. The intermetallic compound comprises aluminum and the second bond metal and is predominantly free of the low melting majority component.

Soldering a conductor to an aluminum layer

An integrated circuit package that includes a leadframe and a mold compound encapsulating at least a portion of the leadframe. The mold compound includes a cavity open at a bottom surface of the mold compound that exposes a bottom surface of the leadframe. A thermally conductive and electrically insulating isolation layer is locked within the bottom cavity of the mold compound and contacts the bottom surface of the leadframe.

Leadframe package with isolation layer

A semiconductor device includes a first semiconductor component having a semiconductor substrate, and a barrier layer disposed at least on or at a portion of the first semiconductor component. The barrier layer includes a polymer material and an organic metal complexing agent covalently bound to the polymer material. In an embodiment, the organic metal complexing agent includes a crown ether and/or cryptand. In an embodiment, the polymer material includes a homopolymer or copolymer resulting from the polymerization of monomers selected from the group consisting of: imides, epoxies, silicones, monomers having functional side chains, methacrylates, and any combinations thereof.

Semiconductor device and method of manufacturing thereof

A device comprises a base element and a metallization layer over the base element. The metallization layer comprises pores and has a varying degree of porosity, the degree of porosity being higher in a portion adjacent to the base element than in a portion remote from the base element.

Device including a metallization layer and method of manufacturing a device

A method a described which includes depositing a first component of a multicomponent system by means of an inkjet process, and depositing a second component of the multicomponent system by means of an inkjet process.

Growing community of inventors

Vienna, Austria

Stefan Schwab