Taiwan Semiconductor Manufacturing Comp. Ltd.

Intel Corporation

Sun Microsystems, Inc.

Sony Corporation of America

Stefan Rusu

Chewn-Pu Jou

Weiwei Song

Po-Chia Lai

Nick Samra

Harry Muljono

Lan-Chou Cho

Tai-Chun Huang

Chih-Tsung Shih

Simon M Tam

Chan-Hong Chern

Mohammed Rabiul Islam

Ting-Wei Chiang

Eric Soenen

Jung-Chan Yang

Rabiul Islam

David J Ayers

Hui-Zhong Zhuang

Chih-Chang Lin

Alan S Roth

Feng-Wei Kuo

Chi-Lin Liu

Meng-Hung Shen

James Steven Burns

Ta-Pen Guo

Chi-Yu Lu

Jerry Chang-Jui Kao

Cheng-I Huang

Yan-Hao Chen

Paul Ranucci

Cheng-Hsien Wu

I-Sheng Chen

Wen-Hao Chen

Kuo-Ji Chen

Wun-Jie Lin

Yu-Ti Su

David Barry Scott

Felix Ying-Kit Tsui

Wilman Tsai

Shenggao Li

Min-Hsiang Hsu

Shu-Yi Ying

Gururaj Shamanna

Jiann-Tyng Tzeng

Sujit Sharan

Huan-Neng Chen

Valluri Ramana Rao

Donald S Gardner

Krishnakanth Venkata Sistla

Edward Thomas Grochowski

Ravindranath Vithal Mahajan

Tessil Thomas

Fatih Hamzaoglu

Richard H Livengood

Vivek Tiwari

Gary Leonard Woods

Phani Kumar Kandula

Shang-Wei Fang

Narayanan Natarajan

Chuei-Tang Wang

Lee-Chung Lu

Chung-Hsing Wang

Muhammad M Khellah

Wei P Chen

Min Huang

Kuo-Nan Yang

Tanay Karnik

James W Tschanz

Alon Naveh

Aaron K Martin

Peter Hazucha

Jerry Chang Jui Kao

Yih Wang

Kevin X Zhang

Devadatta V Bodas

Alper Ilkbahar

James G Hermerding, Ii

Chin-Shen Lin

Alan C Rogers

Hau-Yan Lu

Charles Augustine

Hiranmay Biswas

Chi-Yeh Yu

Jorge Pedro Rodriguez

Ying-Chih Hsu

Jeremy A Rowlette

Carlos Alfonso Tokunaga

Deviprasad Malladi

Edward R Stanford

Joseph T Dibene, Ii

Hung-Piao Ma

Eric A Karl

Wei-Ling Chang

Zheng Guo

Ishmael F Santos

Srikanth Balasubramanian

Travis M Eiles

Roger K Cheng

Donald L Faw

Nathaniel August

A photonic structure and a method for manufacturing the same are provided. The photonic structure includes a substrate, an insulating structure, a first waveguide layer, a second waveguide layer and a high-dielectric constant material. The insulating structure is located over the substrate. The first waveguide layer is embedded in the insulating structure. The second waveguide layer is embedded in the insulating structure and longitudinally spaced apart from the first waveguide layer. The high-dielectric constant material is disposed between the first waveguide layer and the second waveguide layer.

Photonic structure and method for manufacturing the same

An optical device is provided. The optical device includes a substrate, a first optical layer; a high k layer, and a second optical layer. The first optical layer is disposed on the substrate. The first optical layer comprises a top surface, a first sidewall, and a second sidewall opposite thereto. The high k layer is disposed on the top surface of the first optical layer. The second optical layer is disposed on the high k layer. The second optical layer includes a top surface, a third sidewall, and a fourth sidewall opposite thereto. The first sidewall of the first optical layer is misaligned with the third sidewall of the second optical layer. The second sidewall of the first optical layer is coplanar with the fourth sidewall of the second optical layer.

Optical power splitter and method of manufacturing the same

The present disclosure provides a calibration system for wavelength-division multiplexing (WDM), a WDM system, and a calibrating method for WDM. The calibration system includes heating devices, an optical sensor, and an electrical device. When the optical sensor receives no beam with energy exceeding a threshold value from a first channel, the optical sensor transmits a first signal to the electrical device. In response to the first signal, the electrical device is configured to control the one or more of the heating devices to heat one or more of channels. When the optical sensor receives a beam having energy exceeding the threshold value from the first channel, the optical sensor transmits a second signal to the electrical device. In response to the second signal, the electrical device is configured to control the one or more of the heating devices to maintain the temperature of the one or more of the channels.

Calibration system for wavelength-division multiplexing, wavelength-division multiplexing system, and calibrating method for wavelength-division multiplexing

A flip-flop circuit configured to latch an input signal to an output signal is disclosed. The circuit includes a first latch circuit; and a second latch circuit coupled to the first latch circuit. In some embodiments, in response to a clock signal, the first and second latch circuits are complementarily activated so as to latch the input signal to the output signal, and the first and second latch circuits each comprises at most two transistors configured to receive the clock signal.

Low-power flip flop circuit

An integrated circuit structure includes a first and second power rail on a first level, a first and second set of conductive structures on a second level and a first, second and third conductive structure on a third level. The first set of conductive structures is over the first power rail. The second set of conductive structures is over the second power rail. The first conductive structure overlaps a first conductive structure of the first set of conductive structures and a first conductive structure of the second set of conductive structures. The second conductive structure overlaps a second conductive structure of the first set of conductive structures and a second conductive structure of the second set of conductive structures. The third conductive structure overlaps a third conductive structure of the first set of conductive structures and a third conductive structure of the second set of conductive structures.

Integrated circuit, system for and method of forming an integrated circuit

An integrated circuit design method includes receiving an integrated circuit design, and determining a floor plan for the integrated circuit design. The floor plan includes an arrangement of a plurality of functional cells and a plurality of tap cells. Potential latchup locations in the floor plan are determined, and the arrangement of at least one of the functional cells or the tap cells is modified based on the determined potential latchup locations.

Method and system for latch-up prevention

A flip flop circuit includes a first master portion, a second master portion, at least one determining portion and a slave portion. The first master portion is configured to operate at a first mode and to receive a first input and generate first master outputs. The second master portion is configured to operate at a second mode and to receive a second input and generate second master outputs. The at least one determining portion is configured to receive at least one enable signal, and has determining inputs and determining outputs. The determining inputs are connected to the first master outputs and the second master outputs. The determining portion is configured to determine the determining outputs being the first master outputs or the second master outputs according to the at least one enable signal. The slave portion is configured to receive the determining outputs and generate an output signal.

Flip flop circuit

A photonic vertical grating filter is disclosed. The filter comprises a first waveguide, a second waveguide, and a plurality of Bragg gratings. The Bragg gratings are formed in a dielectric layer between the first waveguide and the second waveguide, and are located in a vertical overlap region between the first waveguide and the second waveguide. Each Bragg grating has a different grating period. The vertical filter uses less surface area and provides improved filtering capabilities.

Vertical grating filters for photonics

An integrated circuit is provided, including a first conductive pattern, at least one first conductive segment, and a first via. The first conductive pattern is disposed in a first layer and configured as a terminal of an inverter. The at least one first conductive segment is disposed in a second layer above the first layer and configured to transmit an output signal output from the inverter. The first via contacts the first conductive pattern and the at least one first conductive segment to transmit the output signal. An area, contacting the first conductive pattern, of the first via is smaller than an area, contacting the at least one first conductive segment, of the first via.

Methods of resistance and capacitance reduction to circuit output nodes

The present disclosure provides semiconductor devices and photonic circuits. The semiconductor device includes a substrate and an optical modulator disposed on the substrate. The optical modulator includes a first electrical coupling portion having a first type doping, a second electrical coupling portion having a second type doping, and an optical coupling portion disposed between the first electrical coupling portion and the second electrical coupling portion, where the optical coupling portion includes an intrinsic semiconductor. The optical modulator is configured to receive a first voltage through the first electrical coupling portion and the second electrical coupling portion to decrease a resonant wavelength of the optical modulator.

Semiconductor device, photonic circuit and method for adjusting resonant wavelength of optical modulator

A method of characterizing a traveling-wave Mach-Zehnder modulator (TWMZM) includes measuring an electrooptic parameter, such as S21, of a test structure including a test TWMZM and a first instance of electrical pads which are connected to deliver a radio frequency (RF) signal to electrooptically modulate light traveling through the test TWMZM. The electrooptic parameter is similarly measured of a reference structure including a reference TWMZM and a second instance of the electrical pads which are connected to deliver the RF signal to electrooptically modulate light traveling through the reference TWMZM. A vestigial traveling-wave electrooptic phase modulator of the reference TWMZM is shorter than a traveling-wave electrooptic phase modulator of the test TWMZM. An electrooptic characteristic of the test TWMZM, such as S21 bandwidth, is determined by operations including subtracting the measured electrooptic S21 of the reference structure from the measured electrooptic S21 of the test structure.

Method of measuring electro-optic characteristic of a traveling wave mach-zehnder modulator and device for same

A semiconductor structure includes a semiconductor substrate, a semiconductor device and a heating structure. The semiconductor substrate includes a device region and a heating region surrounding the device region. The semiconductor device is located on the device region. The heating structure is located on the heating region and includes an intrinsic semiconductor area, at least one heating element and at least one heating pad. The intrinsic semiconductor area is surrounding the semiconductor device. The at least one heating element is located at a periphery of the intrinsic semiconductor area. The at least one heating pad is joined with the at least one heating element, wherein the at least one heating pad includes a plurality of contact structures, and a voltage is supplied from the plurality of contact structures to control a temperature of the at least one heating element.

Method of fabricating semiconductor structure with heating element

A method of forming an optical device is provided that can include forming a backside reflector layer, and forming a cladding layer on the backside reflector layer. The method can further include forming a grating layer on the cladding layer, and forming a receiving reflector layer on the cladding layer. The receiving reflector layer can include an opening for receiving optical signal to at least the grating layer.

Reflectors applied to photonics platforms

A benchmark device and a method for evaluating a semiconductor wafer are provided. The benchmark device includes a first grating coupler, a second grating coupler and a waveguide. The waveguide has a least one bending section and is arranged in communication with the first grating coupler and the second grating coupler. The bending section comprises a first region having a first width and a first height, and a second region having a second width and a second height, wherein the first region is surrounded by the second region, and the second width decreases gradually from a first end of the bending section to a second end of the bending section.

Benchmark device and method for evaluating a semiconductor wafer

Growing community of inventors

Sunnyvale, CA, United States of America

Stefan Rusu